| 1 | BCX56SQ-16 | | 下载 | Agertech |
| 2 | BLM10P03-D | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):40A;功率(Pd):23.2W;导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,17A... | 下载 | SHANGHAI BELLING |
| 3 | BZT-RLZ4V7 | BZT-RLZ4V7 - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 4 | BCV26,215 | 30V 20000@5V,100mA PNP 220MHz 100nA 500mA 250mW +150℃@(Tj) 1V@100mA,100uA SOT-23 ... | 下载 | Rubycon Corporation |
| 5 | BZT-RLZ4V3B | BZT-RLZ4V3B - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
| 6 | BCX71J,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):250@2m... | 下载 | Rubycon Corporation |
| 7 | BC857,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):125@2m... | 下载 | Rubycon Corporation |
| 8 | BSN20-VB | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | 下载 | VBsemi Electronics Co. Ltd |
| 9 | BC857ALT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):180@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 10 | BC817-16LT3G | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):300mW; | 下载 | Murata Manufacturing Co., Ltd. |
| 11 | BC807-25,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 12 | BC847B,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Rubycon Corporation |
| 13 | BC857BLT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):220@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 14 | BC847ALT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):180@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | BC807-40LT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):250@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | BC807,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
| 17 | BC817-25LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):160@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 18 | BFS20,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):20V;集电极电流(Ic):25mA;功率(Pd):250mW; | 下载 | Rubycon Corporation |
| 19 | BCW66GLT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):800mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):160@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | BCX17LT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):500mA;功率(Pd):225mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Murata Manufacturing Co., Ltd. |
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