1 | BZV49-C24,115 | 稳压值(标称值):-;稳压值(范围):22.8V~25.6V;精度:±5%;功率:1W;反向电流(Ir):50nA@16.8V; | 下载 | Rubycon Corporation |
2 | BUK9880-55A--CUX | 类型:N沟道;漏源电压(Vdss):55V;连续漏极电流(Id):7A;功率(Pd):8W;导通电阻(RDS(on)@Vgs,Id):73mΩ@10V,8A; | 下载 | Rubycon Corporation |
3 | BCP55-10,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):1.35W;直流电流增益(hFE@Ic,Vce):63@150mA,... | 下载 | Rubycon Corporation |
4 | BZT52C47S-TP | - | 下载 | Micro Commercial Components |
5 | BL8071GCLATR33 | | 下载 | SHANGHAI BELLING |
6 | BK13C06-40DP/2-0.35V(868) | | 下载 | HIROSE ELECTRIC CO.,LTD. |
7 | BZT-RLZ9V1C | BZT-RLZ9V1C - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
8 | BZT-RLZ8V2A | BZT-RLZ8V2A - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
9 | BZT-RLZ7V5B | BZT-RLZ7V5B - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
10 | BT131-600D | | 下载 | RICKY |
11 | BZT-RLZ6V8 | BZT-RLZ6V8 - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
12 | BLP05N08G-B | | 下载 | SHANGHAI BELLING |
13 | BZT-RLZ5V6C | BZT-RLZ5V6C - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
14 | BCX53-16,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):1.3W;直流电流增益(hFE@Ic,Vce):100@150mA,... | 下载 | Rubycon Corporation |
15 | BCX56-16,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):1.25W;直流电流增益(hFE@Ic,Vce):100@150mA... | 下载 | Rubycon Corporation |
16 | BCX53,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):500mW;直流电流增益(hFE@Ic,Vce):63@150mA,... | 下载 | Rubycon Corporation |
17 | BZT-RLZ5V6 | BZT-RLZ5V6 - SILICON EPITAXIAL PLANAR ZENER DIODES - SEMTECH ELECTRONICS LTD. | 下载 | SEMTECH_ELEC[SEMTECHELECTRONICSLTD.] |
18 | BF620,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):50mA;功率(Pd):500mW;集电极截止电流(Icbo):10nA;集电极-发射... | 下载 | Rubycon Corporation |
19 | BCX56-10TX | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):500mW;集电极截止电流(Icbo):100nA;集电极-发射极饱... | 下载 | Rubycon Corporation |
20 | B772 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):3A;功率(Pd):500mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和电... | 下载 | YONGYUTAI |