| 1 | P6SMB12CA | | 下载 | SLKORMICRO Electronics Co., Ltd |
| 2 | PZA1AL5V6B_R1_00001 | | 下载 | PANJIT SEMI CONDUCTOR |
| 3 | PHB32N06-VB | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,50A;阈值... | 下载 | VBsemi Electronics Co. Ltd |
| 4 | PTY88N07 | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | ShenZhen Puolop Electronics co.,LTD. |
| 5 | PXT3904 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):500mW;集电极截止电流(Icbo):50nA;集电极-发射... | 下载 | Rubycon Corporation |
| 6 | PBSS5360XF | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@... | 下载 | Rubycon Corporation |
| 7 | PBSS305NX,115 | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):4.6A;功率(Pd):600mW;直流电流增益(hFE@Ic,Vce):180@2A,... | 下载 | Rubycon Corporation |
| 8 | PBHV9115X,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):520mW;直流电流增益(hFE@Ic,Vce):100@100m... | 下载 | Rubycon Corporation |
| 9 | PXTA92,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):100mA;功率(Pd):1.3W;直流电流增益(hFE@Ic,Vce):25@30m... | 下载 | Rubycon Corporation |
| 10 | PDTD143ETR | TRANS PREBIAS NPN 0.425W | 下载 | Nexperia |
| 11 | PDTC143ET,215 | 1 NPN - Pre Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 12 | PDTA114ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 13 | PDTA123ET,215 | One PNP - Pre-Biased 250mW 100mA 50V SOT-23 Digital Transistors ROHS | 下载 | Rubycon Corporation |
| 14 | PDTC114TT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 15 | PDTA114TT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
| 16 | PDTD143ETR | 晶体管类型:1个NPN-预偏置;功率(Pd):460mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;直流电... | 下载 | Rubycon Corporation |
| 17 | PDTA115ET,215 | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-; | 下载 | Rubycon Corporation |
| 18 | PDTA124XT,215 | 晶体管类型:1个PNP-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA... | 下载 | Rubycon Corporation |
| 19 | PDTC115TT,215 | 晶体管类型:1个NPN-预偏置;功率(Pd):250mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):1uA;直... | 下载 | Rubycon Corporation |
| 20 | PMV28UNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.7A;功率(Pd):510mW；3.9W;导通电阻(RDS(on)@Vgs,Id):32mΩ@... | 下载 | Rubycon Corporation |
工商网监