找到“889N-R5AE-12F”相关的规格书共277,010个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| GB83R600NR | THINKING[ThinkingElectronicIndustrialCo.,Ltd] | GB83R600NR - 3-Electrode 8.0T10 mm Type - Thinking Electronic Industrial Co.,Ltd | 获取价格 | ||
| GB83R230NR | THINKING[ThinkingElectronicIndustrialCo.,Ltd] | GB83R230NR - 3-Electrode 8.0T10 mm Type - Thinking Electronic Industrial Co.,Ltd | 获取价格 | ||
| GB83R090NR | THINKING[ThinkingElectronicIndustrialCo.,Ltd] | GB83R090NR - 3-Electrode 8.0T10 mm Type - Thinking Electronic Industrial Co.,Ltd | 获取价格 | ||
| NR8501CP-BC-AZ | CEL[CaliforniaEasternLabs] | NR8501CP-BC-AZ - InGaAs APD IN COAXIAL PACKAGE FOR 2.5Gb/s APPLICATIONS - California Eastern Labs | 获取价格 | ||
| NR7500CR-CB-AZ | CEL[CaliforniaEasternLabs] | NR7500CR-CB-AZ - InGaAs PIN-PD IN COAXIAL PACKAGE FOR 2.5 Gbp/s APPLICATIONS - California Eastern Labs | 获取价格 | ||
| NR4210TP-AZ | CEL[CaliforniaEasternLabs] | NR4210TP-AZ - InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS - California Eastern Labs | 获取价格 | ||
| MW6S010NR1_09 | FREESCALE[FreescaleSemiconductor,Inc] | MW6S010NR1_09 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF8S9200NR3 | FREESCALE[FreescaleSemiconductor,Inc] | MRF8S9200NR3 - RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF7S19120NR1_09 | FREESCALE[FreescaleSemiconductor,Inc] | MRF7S19120NR1_09 - RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF6S27015NR1 | FREESCALE[FreescaleSemiconductor,Inc] | MRF6S27015NR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF6S20010NR1_09 | FREESCALE[FreescaleSemiconductor,Inc] | MRF6S20010NR1_09 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF5S21045NR1_09 | FREESCALE[FreescaleSemiconductor,Inc] | MRF5S21045NR1_09 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor, Inc | 获取价格 | ||
| RS02C10K00AE12 | VISHAY[VishaySiliconix] | RS02C10K00AE12 - Wirewound Resistors, Military, MIL-PRF-26 Qualified, Type RW, Precision Power, Silicone Coated - Vishay Siliconix | 获取价格 | ||
| RS02C10R00AE12 | VISHAY[VishaySiliconix] | RS02C10R00AE12 - Wirewound Resistors, Military, MIL-PRF-26 Qualified, Type RW, Precision Power, Silicone Coated - Vishay Siliconix | 获取价格 | ||
| AE-3190-NA | MOLEX3[MolexElectronicsLtd.] | AE-3190-NA - 3.96mm (.156") Pitch KK® Wire-to-Board Header, Vertical, Round Pin, with Polarizing Wall, 12 Circuits, Tin (Sn) Plating - Molex Electronics Ltd. | 获取价格 | ||
| GTC08R28-51S-LC | Amphenol Corporation | GT12C12#12SKTPLUGRTANG | 获取价格 | ||
| ACA3100E28-51SB | Amphenol Corporation | ACB12C12#12SKTRECPWALL | 获取价格 | ||
| ACS06F28-51P-003 | Amphenol Corporation | AC12C12#12PINPLUG | 获取价格 | ||
| ACC00E28-51P-003 | Amphenol Corporation | AC12C12#12PINRECP | 获取价格 | ||
| 12X12-12-9629PC | Minnesota Mining and Manufacturing | TAPEDOUBLECOATED12"X12"12/PK | 获取价格 |
