找到“generation”相关的规格书共1,051个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| APT10040LVFR | ADPOW[AdvancedPowerTechnology] | APT10040LVFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. - Advanced Power Technology | 获取价格 | ||
| APT10040B2VR_02 | ADPOW[AdvancedPowerTechnology] | APT10040B2VR_02 - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs - Advanced Power Technology | 获取价格 | ||
| APT10040B2VR | ADPOW[AdvancedPowerTechnology] | APT10040B2VR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs - Advanced Power Technology | 获取价格 | ||
| APT10040B2VFR | ADPOW[AdvancedPowerTechnology] | APT10040B2VFR - Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. - Advanced Power Technology | 获取价格 | ||
| SGW25N120_09 | INFINEON[InfineonTechnologiesAG] | SGW25N120_09 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGW20N60HS | INFINEON[InfineonTechnologiesAG] | SGW20N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP15N120_09 | INFINEON[InfineonTechnologiesAG] | SGP15N120_09 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP15N120 | INFINEON[InfineonTechnologiesAG] | SGP15N120 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP10N60A_09 | INFINEON[InfineonTechnologiesAG] | SGP10N60A_09 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP04N60 | INFINEON[InfineonTechnologiesAG] | SGP04N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP02N60 | INFINEON[InfineonTechnologiesAG] | SGP02N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGP02N120 | INFINEON[InfineonTechnologiesAG] | SGP02N120 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGI02N120 | INFINEON[InfineonTechnologiesAG] | SGI02N120 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGB30N60 | INFINEON[InfineonTechnologiesAG] | SGB30N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGB20N60 | INFINEON[InfineonTechnologiesAG] | SGB20N60 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGB06N60_06 | INFINEON[InfineonTechnologiesAG] | SGB06N60_06 - Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| VSKT9216S90P | VISHAY[VishaySiliconix] | VSKT9216S90P - Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A - Vishay Siliconix | 获取价格 | ||
| VSKT91_10 | VISHAY[VishaySiliconix] | VSKT91_10 - ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A - Vishay Siliconix | 获取价格 | ||
| VSKT9116S90P | VISHAY[VishaySiliconix] | VSKT9116S90P - Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A - Vishay Siliconix | 获取价格 | ||
| VSKT91-14 | VISHAY[VishaySiliconix] | VSKT91-14 - ADD-A-PAK Generation VII Power Modules Thyristor/Diode and Thyristor/Thyristor, 95 A - Vishay Siliconix | 获取价格 |
