找到“VGS-25-XX”相关的规格书共376,084个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| UZ1084L-XX-TN3-A-R | UTC[UnisonicTechnologies] | UZ1084L-XX-TN3-A-R - LINEAR INTEGRATED CIRCUIT - Unisonic Technologies | 获取价格 | ||
| UZ1084-XX-TN3-A-T | UTC[UnisonicTechnologies] | UZ1084-XX-TN3-A-T - LINEAR INTEGRATED CIRCUIT - Unisonic Technologies | 获取价格 | ||
| MT12D436M-XX | MICRON[MicronTechnology] | MT12D436M-XX - DRAM MODULE - Micron Technology | 获取价格 | ||
| L4940XX5 | STMICROELECTRONICS[STMicroelectronics] | L4940XX5 - Very low drop 1.5 A regulator - STMicroelectronics | 获取价格 | ||
| CC1206XX | ETC1[ListofUnclassifedManufacturers] | CC1206XX - MULTILAYER CERAMIC CAPACITORS - List of Unclassifed Manufacturers | 获取价格 | ||
| CC0805XX | ETC1[ListofUnclassifedManufacturers] | CC0805XX - MULTILAYER CERAMIC CAPACITORS - List of Unclassifed Manufacturers | 获取价格 | ||
| 016-851-XX | JFW[JFWIndustries,Inc.] | 016-851-XX - CABLE ASSEMBLY - JFW Industries, Inc. | 获取价格 | ||
| ECOS2EG391XX | PANASONIC[PanasonicSemiconductor] | ECOS2EG391XX - Snap-in Type - Panasonic Semiconductor | 获取价格 | ||
| ECEC2EG391XX | PANASONIC[PanasonicSemiconductor] | ECEC2EG391XX - Snap-in Type - Panasonic Semiconductor | 获取价格 | ||
| HB840U(CHA) | HL | 类型:N沟道;漏源电压(Vdss):520V;连续漏极电流(Id):8A;功率(Pd):135W;导通电阻(RDS(on)@Vgs,Id):750mΩ@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):25nC@10V;输入电容(Ciss@Vds):1nF@25V;反向传输电容(Crss@Vds):20pF@25V;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| BUK7E1R8-40E,127 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):120A;功率(Pd):349W;导通电阻(RDS(on)@Vgs,Id):1.5mΩ@10V,25A;阈值电压(Vgs(th)@Id):3V@1mA;栅极电荷(Qg@Vgs):145nC@10V;输入电容(Ciss@Vds):8500pF@25V;反向传输电容(Crss@Vds):985pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK763R4-30,118 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):75A;功率(Pd):255W;导通电阻(RDS(on)@Vgs,Id):2.9mΩ@10V,25A;阈值电压(Vgs(th)@Id):3V@1mA;栅极电荷(Qg@Vgs):75nC@10V;输入电容(Ciss@Vds):3713pF@25V;反向传输电容(Crss@Vds):460pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK9Y29-40E,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):25A;功率(Pd):37W;导通电阻(RDS(on)@Vgs,Id):25.8mΩ@5V,5A;阈值电压(Vgs(th)@Id):1.7V@1mA;栅极电荷(Qg@Vgs):5nC@5V;输入电容(Ciss@Vds):498pF@25V;反向传输电容(Crss@Vds):49pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK7Y08-40B,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):75A;功率(Pd):105W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,25A;阈值电压(Vgs(th)@Id):3V@1mA;栅极电荷(Qg@Vgs):36.3nC@10V;输入电容(Ciss@Vds):1.53nF@25V;反向传输电容(Crss@Vds):200pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK9Y3R0-40E,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):100A;功率(Pd):194W;导通电阻(RDS(on)@Vgs,Id):2.47mΩ@5V,25A;阈值电压(Vgs(th)@Id):1.7V@1mA;栅极电荷(Qg@Vgs):35.5nC@5V;输入电容(Ciss@Vds):4.471nF@25V;反向传输电容(Crss@Vds):251pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK9M20-40HX | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):25A;功率(Pd):38W;导通电阻(RDS(on)@Vgs,Id):15.8mΩ@10V,10A;阈值电压(Vgs(th)@Id):1.85V@1mA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):545pF@25V;反向传输电容(Crss@Vds):22pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| BUK7Y1R7-40HX | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):120A;功率(Pd):294W;导通电阻(RDS(on)@Vgs,Id):1.35mΩ@10V,25A;阈值电压(Vgs(th)@Id):3V@1mA;栅极电荷(Qg@Vgs):56nC@10V;输入电容(Ciss@Vds):4.095nF@25V;反向传输电容(Crss@Vds):178pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FQA9N90-F109 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):900V;连续漏极电流(Id):8.6A;功率(Pd):240W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,4.3A;阈值电压(Vgs(th)@Id):5V@250uA;栅极电荷(Qg@Vgs):55nC@10V;输入电容(Ciss@Vds):2.7nF@25V;反向传输电容(Crss@Vds):25pF@25V;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| CEG8205-VB | VBsemi Electronics Co. Ltd | 类型:N+N沟道;漏源电压(Vdss):25V;连续漏极电流(Id):6.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| SWD078R08E8T | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):80V;连续漏极电流(Id):95A;导通电阻(RDS(on)@Vgs,Id):8.6mΩ; | 获取价格 |
