找到“ft5526eez”相关的规格书共9,154个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 2SA2039-TL-E | Murata Manufacturing Co., Ltd. | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | 获取价格 | ||
| DTC114EUA | Rubycon Corporation | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):-; | 获取价格 | ||
| ES29LV400FT-90RTGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29LV400FT-90RTGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29LV320FT-90RTG | EXCELSEMI[ExcelSemiconductorInc.] | ES29LV320FT-90RTG - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29DL800FT-70TGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29DL800FT-70TGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29BDS800FT-70TGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29BDS800FT-70TGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29BDS400FT-70RWCI | EXCELSEMI[ExcelSemiconductorInc.] | ES29BDS400FT-70RWCI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29BDS160FT-90RTG | EXCELSEMI[ExcelSemiconductorInc.] | ES29BDS160FT-90RTG - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| NBC-MS--10,0-94B--R4AC SCO | Phoenix Contact | PHOENIX CONTACT - NBC-MS/10,0-94B/R4AC SCO - Sensor Cable, 8P, Cat5, M12 Plug, RJ45 Plug, 8 Positions, 10 m, 33 ft, SPEEDCON | 获取价格 | ||
| BCV 28 H6327 | Infineon Technologies | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):-; | 获取价格 | ||
| BCP 51-16 H6433 | Infineon Technologies | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):-; | 获取价格 | ||
| 3939-1X60YD | Minnesota Mining and Manufacturing | 3M - 3939-1X60YD - TAPE, INSULATION, SILVER, 24MMX60FT - Tape Type:Duct; Tape Backing Material:PP (Polypropylene) Film; Tape Width - Metric:24mm; Tape Width - Imperial:0.945"; Tape Length - Metric:18.288m; Tape Length - Im | 获取价格 | ||
| MMBT2907A | SHENZHEN GOODWORK ELECTRONIC CO.,LTD | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | 获取价格 | ||
| KTC1006-AT--P | KEC CORPORATION | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | 获取价格 | ||
| S9012 | DOESHARE | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | 获取价格 | ||
| HBDM60V600W-7 | Diodes Incorporated | NPN+PNP Ic1=500mA Vceo=1=65V Ic2=-600mA Vceo=2=-60V hfe=100~300 fT=100MHz P=200mW 2通路 | 获取价格 | ||
| ES29LV800FT-90RTGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29LV800FT-90RTGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29DS800FT-70TGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29DS800FT-70TGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29DS640FT-70TGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29DS640FT-70TGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 | ||
| ES29DS400FT-90RTGI | EXCELSEMI[ExcelSemiconductorInc.] | ES29DS400FT-90RTGI - 4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Excel Semiconductor Inc. | 获取价格 |
