找到“ob2112vp”相关的规格书共1,334个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| VP8019LF | BOTHHAND[BothhandUSA,LP.] | VP8019LF - 10/100 BASE-TX VOICE OVER IP MAGNETICS MODULE - Bothhand USA, LP. | 获取价格 | ||
| VP4009ALF | BOTHHAND[BothhandUSA,LP.] | VP4009ALF - 10/100 BASE-TX VOICE OVER IP MAGNETICS - Bothhand USA, LP. | 获取价格 | ||
| VP2019LF | BOTHHAND[BothhandUSA,LP.] | VP2019LF - 10/100 BASE-TX VOICE OVER IP MAGNETICS - Bothhand USA, LP. | 获取价格 | ||
| VP2009LF | BOTHHAND[BothhandUSA,LP.] | VP2009LF - 10/100/1000 BASE-TX VOICEOVER IP MODULE - Bothhand USA, LP. | 获取价格 | ||
| GAL20VP8B-25LP | LATTICE[LatticeSemiconductor] | GAL20VP8B-25LP - High-Speed E2CMOS PLD Generic Array Logic - Lattice Semiconductor | 获取价格 | ||
| GAL16VP8B-15LP | LATTICE[LatticeSemiconductor] | GAL16VP8B-15LP - High-Speed E2CMOS PLD Generic Array Logic - Lattice Semiconductor | 获取价格 | ||
| MRFE6VP5600HSR6 | FREESCALE[FreescaleSemiconductor,Inc] | MRFE6VP5600HSR6 - RF Power Field Effect Transistors High Ruggedness N--Channel Enhancement--Mode - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF6VP2600HR6 | FREESCALE[FreescaleSemiconductor,Inc] | MRF6VP2600HR6 - RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET - Freescale Semiconductor, Inc | 获取价格 | ||
| MRF6VP121KHR6 | FREESCALE[FreescaleSemiconductor,Inc] | MRF6VP121KHR6 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs - Freescale Semiconductor, Inc | 获取价格 | ||
| CAT25040VP2E-GT3 | CATALYST[CatalystSemiconductor] | CAT25040VP2E-GT3 - 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM - Catalyst Semiconductor | 获取价格 | ||
| CAT25020VP2I-GT3 | CATALYST[CatalystSemiconductor] | CAT25020VP2I-GT3 - 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM - Catalyst Semiconductor | 获取价格 | ||
| CAT25010VP2ET3 | CATALYST[CatalystSemiconductor] | CAT25010VP2ET3 - 1-Kb, 2-Kb and 4-Kb SPI Serial CMOS EEPROM - Catalyst Semiconductor | 获取价格 | ||
| CAT24C03VP2I-T | CATALYST[CatalystSemiconductor] | CAT24C03VP2I-T - 2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection - Catalyst Semiconductor | 获取价格 | ||
| CAT24C03VP2I-GT3 | CATALYST[CatalystSemiconductor] | CAT24C03VP2I-GT3 - 2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection - Catalyst Semiconductor | 获取价格 | ||
| CAT24C03VP2I-G3 | CATALYST[CatalystSemiconductor] | CAT24C03VP2I-G3 - 2-Kb and 4-Kb I2C Serial EEPROM with Partial Array Write Protection - Catalyst Semiconductor | 获取价格 | ||
| H8S2112R | RENESAS[RenesasTechnologyCorp] | H8S2112R - 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series - Renesas Technology Corp | 获取价格 | ||
| H8S2112 | RENESAS[RenesasTechnologyCorp] | H8S2112 - 16-Bit Single-Chip Microcomputer H8S Family / H8S/2100 Series - Renesas Technology Corp | 获取价格 | ||
| NAND16GW3C4AN1F | NUMONYX[NumonyxB.V] | NAND16GW3C4AN1F - 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory - Numonyx B.V | 获取价格 | ||
| NAND08GW4B4CN6E | NUMONYX[NumonyxB.V] | NAND08GW4B4CN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 | ||
| NAND08GW4B2DN6E | NUMONYX[NumonyxB.V] | NAND08GW4B2DN6E - 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories - Numonyx B.V | 获取价格 |
