1 | APT32F171K8U6 | QFN32 | 下载 | Shenzhen Aptchip Microelectronics Co.,Ltd |
2 | AO4435A | MOSFETs SOIC-8 | 下载 | Shenzhen UMW Semiconductor Co., Ltd. |
3 | AIP74LVC2G74YA8.TR | | 下载 | WUXII-CORE ELECTRONICS CO.,LTD |
4 | AOD464P | 类型:N沟道;漏源电压(Vdss):105V;连续漏极电流(Id):30A;功率(Pd):80W;导通电阻(RDS(on)@Vgs,Id):45mΩ; | 下载 | Guangdong Field Effect Semiconductor Co., Ltd. |
5 | AP9561GH | | 下载 | APEC |
6 | ARG02BTC4302 | | 下载 | Viking Tech Corp. |
7 | AUIRFR9024NTRPBF-VB | 类型:P沟道;漏源电压(Vdss):-;连续漏极电流(Id):-30A;导通电阻(RDS(on)@Vgs,Id):61mΩ@-10V,-30A; | 下载 | VBsemi Electronics Co. Ltd |
8 | ARFTZB36127-TGC | FAKRA 射频座(蓝色C型)FAKRA沉板试 | 下载 | ACES |
9 | AIP1117-5GH.TR | | 下载 | WUXII-CORE ELECTRONICS CO.,LTD |
10 | A7 | 二极管配置:独立式;直流反向耐压(Vr):1kV;平均整流电流(Io):1A;正向压降(Vf):1.1V@1A; | 下载 | HANGZHOU DONGWO ELECTRONIC TECHNOLOGY CO. LTD. |
11 | ASDM540G-R | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):33A;功率(Pd):70W;导通电阻(RDS(on)@Vgs,Id):31mΩ@10V,12A... | 下载 | Ascend Frequency Devices |
12 | AP9990GH-HF | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):100A;功率(Pd):125W;导通电阻(RDS(on)@Vgs,Id):6mΩ@10V,40A... | 下载 | APEC |
13 | A1015 | 晶体管类型:PNP;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):200mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | SHENZHEN GOODWORK ELECTRONIC CO.,LTD |
14 | AO3402-VB | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6.5A; | 下载 | VBsemi Electronics Co. Ltd |
15 | AP2310GN-VB | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):85mΩ@10V,4A;阈值电压... | 下载 | VBsemi Electronics Co. Ltd |
16 | AO3419-VB | 类型:P沟道;漏源电压(Vdss):-20V;连续漏极电流(Id):-5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@-4.5V,-5A... | 下载 | VBsemi Electronics Co. Ltd |
17 | AS3423B | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):3A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):90mΩ@4.5V,3A; | 下载 | FORMOSA MICROSEMI CO. LTD |
18 | APM2315AC-TRG | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):35mΩ@4.5V,4A... | 下载 | Sinopower Semiconductor, Inc |
19 | APM2701ACC-TRG-VB | 类型:N+P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.... | 下载 | VBsemi Electronics Co. Ltd |
20 | AP2625GY-VB | 类型:2个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):75mΩ@4.5V,4A;阈... | 下载 | VBsemi Electronics Co. Ltd |