1 | NX3225SA-26MHZ-STD-CSR-6 | 无源晶振 26MHz ±15ppm 8pF 50Ω SMD3225_4P 表面贴装 -40℃~+85℃ | 下载 | Nihon Dempa Kogyo |
2 | NDS331N | MOSFETs N-沟道 SOT-23 | 下载 | Tech Public Electronics Co.,Ltd. |
3 | NSM2015-20B5F-Q1SWR | 未分类 | 下载 | Suzhou Novosense Microelectronics Co., Ltd. |
4 | NTB25P06T4G-VB | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):48mΩ@10V,35A;阈值... | 下载 | VBsemi Electronics Co. Ltd |
5 | NP3411MR-G | | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
6 | NP6003VR | | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
7 | NP2301BVR-G | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.4A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):86mΩ@4.5V,2A; | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
8 | NP2300MR-Y-G | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):24mΩ@4.5V,5A; | 下载 | Shanghai Natlinear Electronics Co.,Ltd. |
9 | NSV1C200LT1G | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):2A;功率(Pd):490mW;直流电流增益(hFE@Ic,Vce):120@500m... | 下载 | Murata Manufacturing Co., Ltd. |
10 | NTR1P02T1G | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):1A;功率(Pd):400mW;导通电阻(RDS(on)@Vgs,Id):180mΩ@10V,1.... | 下载 | Murata Manufacturing Co., Ltd. |
11 | NDS0610 | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120mA;功率(Pd):360mW;导通电阻(RDS(on)@Vgs,Id):10Ω@10V,5... | 下载 | Murata Manufacturing Co., Ltd. |
12 | NTR4503NT1G | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):1.5A;功率(Pd):420mW;导通电阻(RDS(on)@Vgs,Id):110mΩ@2.5A... | 下载 | Murata Manufacturing Co., Ltd. |
13 | NTR4170NT1G | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):2.4A;功率(Pd):480mW;导通电阻(RDS(on)@Vgs,Id):55mΩ@10V,3... | 下载 | Murata Manufacturing Co., Ltd. |
14 | NTGD3148NT1G-VB | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):22mΩ@4.5V,6A;阈... | 下载 | VBsemi Electronics Co. Ltd |
15 | NTGD4167CT1G | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | Murata Manufacturing Co., Ltd. |
16 | NTGS3441T1G | | 下载 | Murata Manufacturing Co., Ltd. |
17 | NCS21874DR2G | | 下载 | Murata Manufacturing Co., Ltd. |
18 | NCV21914DR2G | 运放类型:零漂移;增益带宽积(GBP):2MHz;压摆率(SR):1.6V/us; | 下载 | Murata Manufacturing Co., Ltd. |
19 | NJM4558D-#ZZZB | 运放类型:General Purpose;放大器组数:2;增益带宽积(GBP):3MHz;压摆率(SR):1 V/us;电源电压:±4V ~ 18V;各通道供电电流... | 下载 | Nisshinbo Micro Devices Inc. |
20 | NSD914XV2T5G | SS SOD523 SWCH DIODE TR | 下载 | ON Semiconductor |