找到“104FPA850K”相关的规格书共12,696个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| UPD70F3040Y | NEC[NEC] | UPD70F3040Y - V850/SV1TM 32-/16-BIT SINGLE-CHIP MICROCONTROLLERS - NEC | 获取价格 | ||
| UPD703040GM | NEC[NEC] | UPD703040GM - V850/SV1TM 32-/16-BIT SINGLE-CHIP MICROCONTROLLERS - NEC | 获取价格 | ||
| UPD703040 | NEC[NEC] | UPD703040 - V850/SV1TM 32-/16-BIT SINGLE-CHIP MICROCONTROLLERS - NEC | 获取价格 | ||
| MX-850MC | MURATA[MurataManufacturingCo.,Ltd.] | MX-850MC - Precision, Higher-Speed 4-Channel, Analog Multiplexers - Murata Manufacturing Co., Ltd. | 获取价格 | ||
| SB850 | PANJIT[PanJitInternationalInc.] | SB850 - SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 8 Ampere) - Pan Jit International Inc. | 获取价格 | ||
| RF3145_1 | RFMD[RFMicroDevices] | RF3145_1 - QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE - RF Micro Devices | 获取价格 | ||
| TSHG5210 | VISHAY[VishaySiliconix] | TSHG5210 - High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero - Vishay Siliconix | 获取价格 | ||
| 1N5820 | DIOTEC | 肖特基二极管 3A DO201 80pF Vf=850mV Ifsm=15A -50℃~+150℃(TJ) | 获取价格 | ||
| FAR-F5KA-836M50-D4DF | FUJITSU[FujitsuComponentLimited.] | FAR-F5KA-836M50-D4DF - CDMA / GSM850 Tx (50/50ohm Unbalance) - Fujitsu Component Limited. | 获取价格 | ||
| TRM-7000-EMG | OPTOWAY[OptowayTechnologyInc] | TRM-7000-EMG - 5V / 850 nm / 1.25 Gbps RoHS Compliant Optical Multi-Mode Transceiver - Optoway Technology Inc | 获取价格 | ||
| SS2150B | MDD辰达半导体 | 直流反向耐压（Vr）:150V;平均整流电流（Io）:2A;正向压降（Vf）:850mV @ 2A; | 获取价格 | ||
| 21 34 850 0C79 010 | Harting Technology Group | HARTING - 21 34 850 0C79 010 - Sensor Cable, M12 Receptacle, Free End, 12 Positions, 1 m, 3.28 ft | 获取价格 | ||
| HT7737C | Holmate Technology Corp. (Holtek) | 功能类型:升压型;输入电压:850mV~5V;输出电压:3.7V;输出电流(最大值):-; | 获取价格 | ||
| HT7750B | Holmate Technology Corp. (Holtek) | 功能类型:升压型;输入电压:850mV~5V;输出电压:5V;输出电流(最大值):100mA; | 获取价格 | ||
| D110 | DIYI ELECTRONIC | 直流反向耐压(Vr):100V;平均整流电流(Io):1A;正向压降(Vf):850mV@1A; | 获取价格 | ||
| BAT160S,115 | Rubycon Corporation | 直流反向耐压(Vr):60V;平均整流电流(Io):1A;正向压降(Vf):850mV@2A; | 获取价格 | ||
| SB380 | Chongqing Pingwei Technology (Group) Co., Ltd. | 直流反向耐压(Vr):80V;平均整流电流(Io):3A;正向压降(Vf):850mV@3A; | 获取价格 | ||
| HT7727B | Holmate Technology Corp. (Holtek) | 功能类型:升压型;输入电压:850mV~5V;输出电压:2.7V;输出电流(最大值):100mA; | 获取价格 | ||
| MBR10100CG-TN3-R | Unisonic Technology Co., Ltd. | 直流反向耐压(Vr):100V;平均整流电流(Io):5A;正向压降(Vf):850mV@5A; | 获取价格 | ||
| MW2W820MNN1625A4E | Taiwan Chinsan Electronic Industrial Co., Ltd. | 82 µF 450 V 铝电解电容器 径向，Can 850 毫欧 @ 120Hz 105°C 时为 2000 小时 | 获取价格 |
