找到93c76c相关的规格书共6,822
型号厂商描述数据手册替代料参考价格
CAV93C56YE-GT3Murata Manufacturing Co., Ltd.CAV93C56 是一款汽车级,2-Kb 微丝串行 EEPROM 器件,可配置为 128 个 16 位寄存器(ORG 引脚接 VCC)或 256 个 8 位寄存器(ORG 引脚接 GND)。每个寄存器都可使用 DI(或 DO)引脚进行串行写入(或读取)。CAV93C56 具有顺序读取和自计时内部写入,带自动清除。片上接通电源重置电路可防止内部逻辑以错误状态通电。获取价格
CAT93C86BVI-GT3Murata Manufacturing Co., Ltd.The CAT93C86B is a 16-Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C86B features a self获取价格
CAT93C46BYI-GT3Murata Manufacturing Co., Ltd.CAT93C46B 是一款 1-Kb 微丝串行 EEPROM 内存器件,可配置为 64 个 16 位寄存器(VCC 处的 ORG 引脚)或 128 个 8 位寄存器(GND 处的 ORG 引脚)。每个寄存器均可使用 DI(或 DO)引脚进行串行写入(或读取)。CAT93C46B 具有一个自计时内部写入,带自动清除。片上接通电源重置电路会保护内部逻辑不会以错误状态通电。获取价格
CAT93C86BYI-GT3Murata Manufacturing Co., Ltd.The CAT93C86B is a 16-Kb Serial EEPROM memory device which is configured as either registers of 16 bits (ORG pin at VCC) or 8 bits (ORG pin at GND). Each register can be written (or read) serially by using the DI (or DO) pin. The CAT93C86B features a self获取价格
CAV93C86VE-GT3Murata Manufacturing Co., Ltd.CAV93C86 是一款汽车级 16-Kb 微丝串行 EEPROM 内存器件,可配置为 16 位寄存器(VCC 处的 ORG 引脚)或 8 位寄存器(GND 处的 ORG 引脚)。每个寄存器均可使用 DI(或 DO)引脚进行串行写入(或读取)。CAV93C86 采用安森美半导体先进的 CMOS EEPROM 浮动门极工艺制造。该器件可耐受 1,000,000 个编程/擦除循环,数据保留期为 100 年。该器件采用 8 引脚 SOIC 和 TSSOP 封装。获取价格
AM29LV128MH93RFIAMD[AdvancedMicroDevices] AM29LV128MH93RFI - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices获取价格
K7805M-1000R3MORNSUN转换类型:DC-DC 输入电压(DC):8V~36V 输出电压:5V;-5V 输出电流(最大值):-500mA;1A 转换效率:93%;85% K7805M-1000R3,是K7805-1000尺寸的一半大小。获取价格
EFM32GG395F512G-E-BGA120RMurata Manufacturing Co., Ltd.CPU内核:ARM Cortex-M3;CPU最大主频:48MHz;程序存储容量:512KB;程序存储器类型:FLASH;RAM总容量:128KB;GPIO端口数量:93;获取价格
EFM32GG395F1024G-E-BGA120RMurata Manufacturing Co., Ltd.CPU内核:ARM Cortex-M3;CPU最大主频:48MHz;程序存储容量:1MB;程序存储器类型:FLASH;RAM总容量:128KB;GPIO端口数量:93;获取价格
AM29LV128ML93RPCIAMD[AdvancedMicroDevices] AM29LV128ML93RPCI - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices获取价格
0438003.WRGTLittelfuse Inc.标称电压降:93mV 熔断 I²t:0.2922 分断能力:50A 产品:贴片式陶瓷保险丝 标称冷电阻:25.5mΩ 保险丝类型:快速熔断 额定电流:3A获取价格
K7805-1000R3MORNSUN转换类型:DC-DC 输入电压(DC):8V~36V 输出电压:5V;-5V 输出电流(最大值):-500mA;1A 转换效率:93%;86% 可正负配置 K7805-1000R3是K7805-1000、K7805-1000R2升级型号获取价格
CTBP93HE/4CAMDENBOSSCAMDENBOSS - CTBP93HE/4 - Terminal Block, Closed Ended, Header, 3.81 mm, 4 Ways, Through Hole Right Angle - Terminal Block, Closed Ended, Header, 3.81 mm, 4 Ways, Through Hole Right Angle获取价格
HBLDS3SSJHUBBELL INCORPORATEDHUBBELL WIRING DEVICES - HBLDS3SSJ - LOAD BREAK SWITCH, 3 POLE, 30A, 600VAC - Contact Current AC Max:30A; Contact Voltage AC Max:600V; No. of Poles:3 Pole; Product Range:Circuit-Lock Series 93Y5426获取价格
BR93L66F-WE2Rohm SemiconductorBR93L66F-WE2 是一款3线串行EEPROM,支持高速2MHz时钟,工作电压范围为1.8V至5.5V,具有自动地址递增功能,低功耗,数据保留时间为40年,写周期寿命为1,000,000次。获取价格
AM29LV128ML93RFIAMD[AdvancedMicroDevices] AM29LV128ML93RFI - 128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O™ Control - Advanced Micro Devices获取价格
STE20D470K1DN0FSB0R0STE最大工作电压(AC):30V 最大工作电压(DC):38V 压敏电压:42V~52V 钳位电压:93V 峰值浪涌电流:1kA 能量:30J 静态电容:7400pF@1kHz获取价格
EFM32GG11B420F2048IL120-BRMurata Manufacturing Co., Ltd.CPU内核:ARM Cortex-M4;CPU最大主频:72MHz;程序存储容量:2MB;程序存储器类型:FLASH;RAM总容量:512KB;GPIO端口数量:93;获取价格
EFM32GG295F1024G-E-BGA120RMurata Manufacturing Co., Ltd.CPU内核:ARM Cortex-M3;CPU最大主频:48MHz;程序存储容量:1MB;程序存储器类型:FLASH;RAM总容量:128KB;GPIO端口数量:93;获取价格
EFM32GG11B420F2048IL120-BMurata Manufacturing Co., Ltd.CPU内核:ARM Cortex-M4;CPU最大主频:72MHz;程序存储容量:2MB;程序存储器类型:FLASH;RAM总容量:512KB;GPIO端口数量:93;获取价格