APTC80A15SCTG

APTC80A15SCTG VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module NTC2 VBUS Q1 Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated G1 OUT S1 Q2 • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • • Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration G2 0/VBU S S2 NTC1 • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 112 ±30 150 277 17 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–9 APTC80A15SCTG – Rev 4 October, 2013 Symbol VDSS APTC80A15SCTG Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 4507 2092 108 Max 50 375 150 3.9 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz pF 180 VGS = 10V VBus = 400V ID = 28A 22 nC 90 Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 10 13 83 ns 35 291 µJ 278 510 µJ 342 0.45 °C/W Series diode ratings and characteristics IF VF DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge RthJC Min 1000 Tc = 80°C IF = 60A IF = 120A IF = 60A IF = 60A VR = 667V di/dt = 400A/µs Junction to Case Thermal Resistance Typ Tj = 125°C 60 1.9 2.2 1.7 Tj = 25°C 290 Tj = 125°C 390 Tj = 25°C 1.34 Tj = 125°C 4.7 Max Unit V 250 µA A 2.3 V ns µC 0.65 www.microsemi.com °C/W 2–9 APTC80A15SCTG – Rev 4 October, 2013 Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR = 1000V APTC80A15SCTG Parallel diode ratings and characteristics Symbol Characteristic Test Conditions VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 64 112 20 1.6 2..3 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 1200V di/dt =1000A/µs 160 Q Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 RthJC Junction to Case Thermal Resistance Unit V µA A 1.8 V nC pF 1 °C/W Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink M5 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max Unit V 150 TJmax -25 125 100 4.7 160 N.m g Typ 50 3952 Unit kΩ K °C Temperature sensor NTC (see application note APT0406 on www.microsemi.com). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Max R25 T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ ⎝ T25 T ⎠⎦ ⎣ www.microsemi.com 3–9 APTC80A15SCTG – Rev 4 October, 2013 RT = Min APTC80A15SCTG SP4 Package outline (dimensions in mm) www.microsemi.com 4–9 APTC80A15SCTG – Rev 4 October, 2013 See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com APTC80A15SCTG Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.45 0.4 0.9 0.7 0.35 0.3 0.25 0.2 0.15 0.1 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 100 VGS=15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty 80 60 TJ=25°C 40 20 TJ=125°C 4V 0 0 0 5 10 15 20 0 25 RDS(on) vs Drain Current Normalized to VGS=10V @ 14A VGS=10V 1.2 VGS=20V 1.1 3 4 5 6 7 8 DC Drain Current vs Case Temperature 30 1.4 1.3 2 VGS , Gate to Source Voltage (V) ID, DC Drain Current (A) RDS (on) Drain to Source ON Resistance VDS , Drain to Source Voltage (V) 1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 5–9 APTC80A15SCTG – Rev 4 October, 2013 ID, Drain Current (A) 70 ID, Drain Current (A) 80 Breakdown Voltage vs Temperature 1.15 1.10 1.05 1.00 25 50 75 100 125 150 ON resistance vs Temperature RDS (on), Drain to Source ON resistance (Normalized) 3.0 2.5 2.0 1.5 1.0 0.5 25 TJ, Junction Temperature (°C) 75 100 125 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 50 TJ, Junction Temperature (°C) 1.1 1.0 0.9 0.8 100 50 75 100 125 1ms 1 1000 Coss 100 Crss VGS , Gate to Source Voltage (V) Ciss 10 20 30 40 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 I D=28A TJ=2 5 °C 12 VDS=160V 10 10 0 100ms 0 TC, Case Temperature (°C) 10000 100µs Single pulse TJ =150°C TC=25°C 1 150 Capacitance vs Drain to Source Voltage 100000 limited by R DSon 10 0.7 25 C, Capacitance (pF) VGS=10V I D= 14A 50 VDS=400V 8 6 VDS=640V 4 2 0 0 40 80 120 160 200 Gate Charge (nC) VDS , Drain to Source Voltage (V) www.microsemi.com 6–9 APTC80A15SCTG – Rev 4 October, 2013 BVDSS , Drain to Source Breakdown Voltage (Normalized) APTC80A15SCTG APTC80A15SCTG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 80 VDS=533V R G =2.5Ω TJ=1 25 °C L=100µH 60 t r and t f (ns) 40 30 20 td(on) 20 VDS=533V R G =2.5Ω TJ=1 25 °C L=100µH 10 0 0 10 20 30 40 10 50 20 ID, Drain Current (A) Switching Energy vs Current 50 Switching Energy vs Gate Resistance Eon Switching Energy (µJ) Eon and Eoff (µJ) 40 2500 VDS=533V R G=2.5Ω TJ=1 25 °C L=100µH 750 30 ID, Drain Current (A) 900 600 450 Eoff 300 150 VDS=533V I D=28A TJ=1 25 °C L=100µH 2000 Eoff 1500 1000 Eon 500 Eoff 0 0 10 20 30 40 ID, Drain Current (A) 300 ZVS VDS=533V D=50% R G=2.5Ω TJ=1 25 °C TJ=7 5 °C 150 100 50 ZCS Hard Switching 0 5 10 15 20 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 350 200 5 Gate Resistance (Ohms) Operating Frequency vs Drain Current 250 0 50 400 Frequency (kHz) tr 100 25 ID, Drain Current (A) TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) www.microsemi.com 7–9 APTC80A15SCTG – Rev 4 October, 2013 td(on) and td(off) (ns) td(off) APTC80A15SCTG Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 30 600 TJ=75°C 20 15 TJ=125°C 10 TJ=175°C 5 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 25 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 450 300 TJ=75°C TJ=125°C 150 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 1200 1000 800 600 400 200 1 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 8–9 APTC80A15SCTG – Rev 4 October, 2013 0 APTC80A15SCTG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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