找到“BC859CW”相关的规格书共8,672个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SSCDDRN1.6BC4A3 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDDRN1.6BC4A3 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| IDT70T633S12BC | IDT[IntegratedDeviceTechnology] | IDT70T633S12BC - HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| SSCDDRD1.6BC6A3 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDDRD1.6BC6A3 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| SSCDDRD1.6BC5A5 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDDRD1.6BC5A5 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| SSCDDRD1.6BC4A5 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDDRD1.6BC4A5 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| IDT70T3599S133BC | IDT[IntegratedDeviceTechnology] | IDT70T3599S133BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3589S200BC | IDT[IntegratedDeviceTechnology] | IDT70T3589S200BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3589S166BC | IDT[IntegratedDeviceTechnology] | IDT70T3589S166BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| SSCDANN1.6BC6A5 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDANN1.6BC6A5 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| SSCDANN1.6BC2A3 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDANN1.6BC2A3 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| IDT70T3539MS166BC | IDT[IntegratedDeviceTechnology] | IDT70T3539MS166BC - HIGH-SPEED 2.5V 512K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3519S200BC | IDT[IntegratedDeviceTechnology] | IDT70T3519S200BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3519S166BC | IDT[IntegratedDeviceTechnology] | IDT70T3519S166BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3519S133BC | IDT[IntegratedDeviceTechnology] | IDT70T3519S133BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| IDT70T3519S-200BC | IDT[IntegratedDeviceTechnology] | IDT70T3519S-200BC - HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE - Integrated Device Technology | 获取价格 | ||
| SSCDAND1.6BC2A3 | HONEYWELL[HoneywellSolidStateElectronicsCenter] | SSCDAND1.6BC2A3 - TruStability silicon Pressure Sensors: SSC Series-Standard Accuracy -2% total Error band,Digital output,SMT and DIP,60 mbar to 10 bar - Honeywell Solid State Electronics Center | 获取价格 | ||
| IRG4BC30SS_04 | IRF[InternationalRectifier] | IRG4BC30SS_04 - INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) - International Rectifier | 获取价格 | ||
| IRG4BC20MD | IRF[InternationalRectifier] | IRG4BC20MD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) - International Rectifier | 获取价格 | ||
| IRG4BC20FD-S | IRF[InternationalRectifier] | IRG4BC20FD-S - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A) - International Rectifier | 获取价格 | ||
| IRG4BC10UD | IRF[InternationalRectifier] | IRG4BC10UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A) - International Rectifier | 获取价格 |
