找到“CDCFR83ADBQG4”相关的规格书共5,882个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 83-1SP | Amphenol Corporation | AMPHENOL RF - 83-1SP - RF / Coaxial Connector, UHF Coaxial, Straight Plug, Solder, 50 ohm, RG213/U, RG225/U, RG8/U, RG9/U | 获取价格 | ||
| 0805AQ-011J-04 | Fastron technologies PTY LTD | Inductor RF Chip Molded/Unshielded Wirewound 0.011uH 5% 250MHz 83Q-Factor Ceramic 1.6A 0.06Ohm DCR 0805 Automotive T/R | 获取价格 | ||
| FCD7N60TM-WS | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):7A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):600mΩ@3.5A,10V; | 获取价格 | ||
| HCS1-03S05 | Guangdong Weier Technology Co., Ltd. | 输入电压(标称值) 3.3 输出电压(VDC) 5 最小电流(mA) 0 最大电流(mA) 200 满载效率(%) 83 最大容性负载(uF) 4000 | 获取价格 | ||
| HCS1-03S05 | Guangdong Weier Technology Co., Ltd. | 输入电压(标称值) 3.3 输出电压(VDC) 5 最小电流(mA) 0 最大电流(mA) 200 满载效率(%) 83 最大容性负载(uF) 4000 | 获取价格 | ||
| HSH18N20 | HUASHUO SEMICONDUCTOR | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):18A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):170mΩ@10V,9A; | 获取价格 | ||
| MPC8347EVRAGDB | NXP Semiconductors | PowerPC e300 Microprocessor IC MPC83xx 1 Core, 32-Bit 400MHz 620-PBGA (29x29) | 获取价格 | ||
| BSC0702LS | Infineon Technologies | 功率晶体管 60V 100A 83W 2.3mΩ@10V,50A 2.3V@49uA N Channel TDSON-8-EP(6x5) | 获取价格 | ||
| L-07W5N1SV4T | Johanson | 固定电感器 0402 5.1nH ±0.3nH 800mA 83mΩ 5.8GHz 58@900MHz | 获取价格 | ||
| PID24P05I1R2S | Jiewei | 输入电压：18～36Vdc 输出电压：5V 输出电流：1200mA 输出功率：6W 效率：83% 25.4*25.4*12.2mm | 获取价格 | ||
| PID24P18I0R5S | Jiewei | 输入电压：18～36Vdc 输出电压：18V 输出电流：555mA 输出功率：10W 效率：83% 25.4*25.4*12.2mm | 获取价格 | ||
| PID28P05I1R2S | Jiewei | 输入电压：9~36Vdc 输出电压：5V 输出电流：1200mA 输出功率：6W 效率：83% 25.4*25.4*12.2mm | 获取价格 | ||
| IS41LV32256 | ISSI[IntegratedSiliconSolution,Inc] | IS41LV32256 - 256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz - Integrated Silicon Solution, Inc | 获取价格 | ||
| HM5216805TT-12 | HITACHI[HitachiSemiconductor] | HM5216805TT-12 - 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ´ 8-bit ´ 2-bank/2-Mword ´ 4-bit ´ 2-bank - Hitachi Semiconductor | 获取价格 | ||
| S29GL128M90FFIR83 | SPANSION[SPANSION] | S29GL128M90FFIR83 - 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology - SPANSION | 获取价格 | ||
| S29GL128M90FAIR83 | SPANSION[SPANSION] | S29GL128M90FAIR83 - 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology - SPANSION | 获取价格 | ||
| S29GL064M90FBIR83 | SPANSION[SPANSION] | S29GL064M90FBIR83 - 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology - SPANSION | 获取价格 | ||
| S29GL064M90FAIR83 | SPANSION[SPANSION] | S29GL064M90FAIR83 - 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 μm MirrorBit Process Technology - SPANSION | 获取价格 | ||
| FHW0402UC5N1JST | GUANGDONG FENGHUA ADVANCED TECHNOLOGY HOLOING CO.,LTD. | 电感值:5.1nH;精度:±5%;额定电流:800mA;饱和电流(Isat):-;直流电阻(DCR):83mΩ; | 获取价格 | ||
| SEZ52C2V7 | SINO-IC | 二极管配置:独立式;稳压值(标称值):-;稳压值(范围):2.57V~2.84V;精度:-;功率:200mW;反向电流(Ir):75uA@1V;阻抗(Zzt):83Ω; | 获取价格 |
