| DN3134KW | DOESHARE | NOMS 20V 750mA RDS(on)=300mΩ WITH ESD SOT-323 | | | 获取价格 |
| RS2M | DOESHARE | | | | 获取价格 |
| GS3M | DOESHARE | 肖特基二极管 SMB(DO-214AA) | | | 获取价格 |
| S9013 | DOESHARE | 晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):500mA;功率(Pd):300mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):500mV@500mA,50mA;特征频率(fT):-;工作温度:+150℃@(Tj); | | | 获取价格 |
| S9012 | DOESHARE | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;集电极截止电流(Icbo):-;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):-;特征频率(fT):-; | | | 获取价格 |
| DP2301S | DOESHARE | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.3A;功率(Pd):1W;导通电阻(RDS(on)@Vgs,Id):125mΩ@4.5V,2A;阈值电压(Vgs(th)@Id):600mV@250uA;栅极电荷(Qg@Vgs):5.3nC@4.5V;输入电容(Ciss@Vds):177pF@10V;反向传输电容(Crss@Vds):25pF@10V;工作温度:-50℃~+150℃@(Tj); | | | 获取价格 |
| DT1T10A-B | DOESHARE | | | | 获取价格 |
| MMBT3906M | DOESHARE | PNP -40V -200mA 100-300 SOT-723 | | | 获取价格 |
| ESD523UC5VB | DOESHARE | | | | 获取价格 |
| DT12T10E-B | DOESHARE | | | | 获取价格 |
| SODS1M | DOESHARE | 直流反向耐压(Vr):1kV;平均整流电流(Io):1A;正向压降(Vf):1.1V@1A;反向电流(Ir):5uA@1kV; | | | 获取价格 |
| DT1T5A-B | DOESHARE | | | | 获取价格 |
| MMBT3906W | DOESHARE | PNP -40V -200mA SOT-323 | | | 获取价格 |
| 2SA1774R | DOESHARE | 晶体管类型:-;集射极击穿电压(Vceo):-;集电极电流(Ic):-;功率(Pd):-;直流电流增益(hFE@Ic,Vce):-; | | | 获取价格 |
| BAW56 | DOESHARE | | | | 获取价格 |
| BAS21 | DOESHARE | | | | 获取价格 |
| BC858B | DOESHARE | | | | 获取价格 |
| 2N7002W | DOESHARE | Mosfet Transistor, N Channel, 115 Ma, 78 V, 2.53 Ohm, 10 V, 1.76 V | | | 获取价格 |
| S9018 | DOESHARE | 晶体管类型:NPN;集射极击穿电压(Vceo):15V;集电极电流(Ic):50mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):105@1mA,5V; | | | 获取价格 |
| S9014 | DOESHARE | 晶体管类型:NPN;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):225mW; | | | 获取价格 |
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