| IPT2008-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q08-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q08-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q06-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q06-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-BEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1208-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1208-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q08-BED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q08-BED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT08Q06-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT08Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0808-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0808-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0808-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0808-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-CEI | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-CEI - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0806-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0806-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q08-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q08-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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