| M61018GP | MITSUBISHI[MitsubishiElectricSemiconductor] | M61018GP - MOTOR DRIVER FOR CAMERA - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CT35SM-8 | MITSUBISHI[MitsubishiElectricSemiconductor] | CT35SM-8 - STROBE FLASHER USE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CT20VS-8 | MITSUBISHI[MitsubishiElectricSemiconductor] | CT20VS-8 - STROBE FLASHER USE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC3630 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC3630 - NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC3240 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC3240 - NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC3103 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC3103 - NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC3022 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC3022 - NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC2695 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC2695 - NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC2627 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC2627 - NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR6PM | MITSUBISHI[MitsubishiElectricSemiconductor] | CR6PM - MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR6CM | MITSUBISHI[MitsubishiElectricSemiconductor] | CR6CM - MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR5AS | MITSUBISHI[MitsubishiElectricSemiconductor] | CR5AS - MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC2237 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC2237 - NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| 2SC2133 | MITSUBISHI[MitsubishiElectricSemiconductor] | 2SC2133 - NPN EPITAXIAL PLANAR TYPE(for RF power amplifiers in UHF band 24 to 28 volts operation applications) - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR2AM | MITSUBISHI[MitsubishiElectricSemiconductor] | CR2AM - LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR04AM | MITSUBISHI[MitsubishiElectricSemiconductor] | CR04AM - LOW POWER USE GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR04 | MITSUBISHI[MitsubishiElectricSemiconductor] | CR04 - LOW POWER USE GLASS PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CR02AM | MITSUBISHI[MitsubishiElectricSemiconductor] | CR02AM - LOW POWER USE PLANAR PASSIVATION TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CM800HB-66H | MITSUBISHI[MitsubishiElectricSemiconductor] | CM800HB-66H - HIGH POWER SWITCHING USE INSULATED TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
| CM800HA-50H | MITSUBISHI[MitsubishiElectricSemiconductor] | CM800HA-50H - HIGH POWER SWITCHING USE INSULATED TYPE - Mitsubishi Electric Semiconductor | | | 获取价格 |
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