| ST2300S23RG-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):2.1W;导通电阻(RDS(on)@Vgs,Id):28mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):1V@250uA; | | | 获取价格 |
| BSH114-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=100V VGS=±20V ID=1.6A RDS(ON)=260mΩ@4.5V SOT23 | | | 获取价格 |
| AP2301N-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| APM2321AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| 2N7002E-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT-23 | | | 获取价格 |
| BSS308PE-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-30V;连续漏极电流(Id):-5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@-10V,-5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| CMN2305M-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLMS6802TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HM8810A-VB | VBsemi Electronics Co. Ltd | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):24mΩ@4.5V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| NCE30H12K-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):250W;导通电阻(RDS(on)@Vgs,Id):2.31mΩ@10V,38.8A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):81.5nC@4.5V;输入电容(Ciss@Vds):6.201nF@15V;反向传输电容(Crss@Vds):970pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| NIF9N05CL-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4.5A;功率(Pd):4W;导通电阻(RDS(on)@Vgs,Id):76mΩ@10V,4A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):10nC@4.5V;输入电容(Ciss@Vds):810pF@30V;反向传输电容(Crss@Vds):100pF@30V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| FDT86113LZ-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):100mΩ@10V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| IRLL024ZTR-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):7A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):29mΩ@10V,7A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| VBF2355 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):20A;功率(Pd):20W;导通电阻(RDS(on)@Vgs,Id):56mΩ@10V,20A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| VBFB2658 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):53mΩ@10V,25A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| VBFB1405 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):85A;功率(Pd):312W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,85A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| IRF9530NPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):100V;连续漏极电流(Id):18A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):167mΩ@10V,18A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| MTD20N03HDLT4G-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,21.8A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):25nC@4.5V;输入电容(Ciss@Vds):2.201nF@15V;反向传输电容(Crss@Vds):370pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| NT2955G-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):30A;功率(Pd):34W;导通电阻(RDS(on)@Vgs,Id):61mΩ@10V,5A;阈值电压(Vgs(th)@Id):2V@250uA;栅极电荷(Qg@Vgs):10nC@10V;输入电容(Ciss@Vds):1nF@25V;反向传输电容(Crss@Vds):100pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| SUD50P04-09L-E3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):50A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
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