| 1 | 2SCR375PT100R | 晶体管类型:NPN;集射极击穿电压(Vceo):120V;集电极电流(Ic):1.5A;功率(Pd):2W;集电极截止电流(Icbo):1uA;集电极-发射极饱和电... | 下载 | Rohm Semiconductor |
| 2 | 2N7002CK,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.1Ω@10V,... | 下载 | Rubycon Corporation |
| 3 | 2SC3906KFRAT146 | 晶体管类型:NPN;集射极击穿电压(Vceo):120V;集电极电流(Ic):50mA;功率(Pd):200mW;集电极截止电流(Icbo):500nA;集电极-发... | 下载 | Rohm Semiconductor |
| 4 | 2N7002ET1G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):260mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 5 | 2V7002KT1G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):320mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 6 | 2SK3576-T1B-AT | MOSFET N-CH 20V SC-96 SOT-23 | 下载 | Renesas Electronics America |
| 7 | 2N5550TFR | 晶体管类型:NPN;集射极击穿电压(Vceo):140V;集电极电流(Ic):600mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):60@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 8 | 2EZ13D5 | 二极管 - 齐纳 13 V 2 W ±5% 通孔 DO-204AL（DO-41） | 下载 | Microchip Technology Inc. |
| 9 | 2EZ20_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
| 10 | 2EZ36_R2_00001 | SILICON ZENER DIODE | 下载 | PANJIT SEMI CONDUCTOR |
| 11 | 2EZ22_R2_00001 | 二极管 - 齐纳 22 V 2 W ±5% 通孔 DO-15 | 下载 | PANJIT SEMI CONDUCTOR |
| 12 | 2SB834 | 晶体管类型:PNP;集射极击穿电压(Vceo):60V;集电极电流(Ic):3A;功率(Pd):1.5W; | 下载 | Rubycon Corporation |
| 13 | 2N60L-TA3-T | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):54W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,2A;阈值电... | 下载 | Unisonic Technology Co., Ltd. |
| 14 | 2N7002BKW,115 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):310mA;功率(Pd):275mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Rubycon Corporation |
| 15 | 20N06 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):41W;导通电阻(RDS(on)@Vgs,Id):20mΩ; | 下载 | Goford Semiconductor Co.,Ltd. |
| 16 | 2SC5658 | | 下载 | Rubycon Corporation |
| 17 | 2SK3541 | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):100mA;功率(Pd):150mW;导通电阻(RDS(on)@Vgs,Id):8Ω@4V,10m... | 下载 | Rubycon Corporation |
| 18 | 2.0-2*25P压线头 | 连接器类型:IDC连接器;每排PIN数:25;排数:2;间距:2mm;行距:2mm;封装形式:二件式(连接器+压排);触头材质:-;触头镀层:金; | 下载 | Boom Precision Electronics Co., Ltd. |
| 19 | 2N5551TFR | 晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):600mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):80@10... | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | 2120-CB | | 下载 | FM |
