SCT3160KLGC11

SCT3160KL Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS(on) (Typ.) 160m ID 17A PD 103W TO-247N (1)(2)(3) Inner circuit (2) Features (1) Gate (2) Drain (3) Source 1) Low on-resistance *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tube 6) Pb-free lead plating ; RoHS compliant Reel size (mm) - Tape width (mm) - Type Application Basic ordering unit (pcs) ・Solar inverters Taping code ・DC/DC converters 30 C11 Marking SCT3160KL ・Switch mode power supplies ・Induction heating ・Motor drives Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Unit VDSS 1200 V ID *1 17 A Tc = 100°C ID *1 12 A ID,pulse *2 42 A VGSS 4 to +22 V VGSS_surge 4 to +26 V VGS_op 0 / +18 V Tj 175 °C Tstg 55 to 175 °C Gate - Source voltage Gate-Source Surge Voltage Recommended Drive Voltage Junction temperature Range of storage temperature Downloaded from Arrow.com. Value Tc = 25°C Pulsed drain current www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Symbol 1/12 2018.03 - Rev.D Datasheet SCT3160KL Thermal resistance Values Parameter Symbol RthJC Thermal resistance, junction - case Unit Min. Typ. Max. - 1.12 1.46 C/W Electrical characteristics (Ta = 25°C) Values Parameter Drain - Source breakdown voltage Symbol V(BR)DSS Conditions Unit Min. Typ. Max. 1200 - - V Tj = 25°C - 1 10 A Tj = 150°C - 2 - VGS = 0V, ID = 1mA VDS = 1200V, VGS = 0V Zero gate voltage drain current IDSS Gate - Source leakage current IGSS VGS = 22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS VGS = 4V, VDS = 0V - - 100 nA 2.7 - 5.6 V Tj = 25°C - 160 208 m Tj = 125°C - 240 - f = 1MHz, open drain - 18 - Gate threshold voltage VGS (th) VDS = 10V, ID = 2.5mA VGS = 18V, ID = 5A Static drain - source on - state resistance Gate input resistance RDS(on) *3 RG  Example of acceptable Vgs waveform www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 2/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristics (Ta = 25°C) Values Parameter Symbol *3 Conditions Unit Min. Typ. Max. VDS = 10V, ID = 5A - 2.5 - Transconductance gfs Input capacitance Ciss VGS = 0V - 398 - Output capacitance Coss VDS = 800V - 41 - Reverse transfer capacitance Crss f = 1MHz - 18 - Effective output capacitance, energy related Co(er) VGS = 0V VDS = 0V to 600V - 45 - Turn - on delay time td(on) *3 VDD = 400V, ID =5A - 14 - VGS = 18V/0V - 18 - RL =80 - 24 - RG = 0 - 25 - - 62 - Rise time tr Turn - off delay time Fall time Turn - off switching loss *3 td(off) tf Turn - on switching loss *3 *3 Eon *3 Eoff *3 S pF pF ns VDD = 600V, ID=5A VGS = 18V/0V RG = 0 L=750H *Eon includes diode reverse recovery J - 12 - Gate Charge characteristics (Ta = 25°C) Values Parameter Symbol Total gate charge Qg *3 Gate - Source charge Qgs *3 Gate - Drain charge Qgd *3 Gate plateau voltage V(plateau) Conditions Unit Min. Typ. Max. VDD = 600V - 42 - ID = 5A - 11 - VGS = 18V - 18 - VDD = 600V, ID = 5A - 9.6 - nC V *1 Limited only by maximum temperature allowed. *2 PW  10s, Duty cycle  1% *3 Pulsed www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 3/12 2018.03 - Rev.D Datasheet SCT3160KL Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Inverse diode continuous, forward current Symbol IS Conditions *1 Unit Min. Typ. Max. - - 17 A - - 42 A - 3.2 - V - 13 - ns - 26 - nC - 4 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD Reverse recovery time trr *3 *3 Reverse recovery charge Qrr *3 Peak reverse recovery current Irrm *3 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. VGS = 0V, IS = 5A IF =5A, VR = 600V di/dt = 1100A/s 4/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 1000 Operation in this area is limited by RDS(ON) Ta = 25ºC Single Pulse 100 Drain Current : ID [A] Power Dissipation : PD [W] 100 80 60 40 PW = 100µs 10 PW = 1ms 1 PW = 10ms 20 PW = 100ms 0.1 0 0 50 100 150 0.1 200 1 10 100 1000 10000 Drain - Source Voltage : VDS [V] Case Temperature : TC [°C] Transient Thermal Resistance : Rth [K/W] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width 10 1 0.1 0.01 Ta = 25ºC Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : PW [s] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 5/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II) 10 20 20V 18 20V 9 8 14V 16V Drain Current : ID [A] Drain Current : ID [A] 16 14 Ta = 25ºC Pulsed 12 10 12V 8 6 16V 7 12V 6 5 4 3 4 10V 2 2 VGS= 8V 1 0 10V VGS= 8V 0 0 2 4 6 8 10 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.6 Tj = 150ºC Typical Output Characteristics(I) Fig.7 Tj = 150ºC Typical Output Characteristics(II) 10 20 20V 18 14V 18V 16 20V 9 12V 14V 18V 8 16V 12V 16V 14 Drain Current : ID [A] Drain Current : ID [A] Ta = 25ºC Pulsed 14V 18V 18V Ta = 150ºC Pulsed 12 10 10V 8 6 4 VGS= 8V 7 10V 6 5 4 VGS= 8V 3 2 Ta = 150ºC Pulsed 1 2 0 0 0 2 4 6 8 0 10 Drain - Source Voltage : VDS [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 6/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.8 Typical Transfer Characteristics (I) Fig.9 Typical Transfer Characteristics (II) 20 100 VDS = 10V Pulsed VDS = 10V Pulsed 18 16 1 Drain Current : ID [A] Drain Current : ID [A] 10 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 0.1 14 12 10 8 Ta= 150ºC Ta= 75ºC Ta= 25ºC Ta= 25ºC 6 4 2 0.01 0 0 2 4 6 8 10 12 14 16 18 20 0 Gate - Source Voltage : VGS [V] 8 10 12 14 16 18 20 10 VDS = 10V ID = 2.5mA 5 VDS = 10V Pulsed Transconductance : gfs [S] Gate Threshold Voltage : V GS(th) [V] 6 Fig.11 Transconductance vs. Drain Current 6 4 3 2 1 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0 50 100 150 0.1 200 Junction Temperature : Tj [ºC] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 4 Gate - Source Voltage : VGS [V] Fig.10 Gate Threshold Voltage vs. Junction Temperature 0 -50 2 1 10 Drain Current : ID [A] 7/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.12 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature 0.64 Ta = 25ºC Pulsed 0.56 0.48 0.40 0.32 ID = 11A 0.24 ID = 5A 0.16 0.08 0.00 6 8 10 12 14 16 18 20 22 Static Drain - Source On-State Resistance : RDS(on) [] Static Drain - Source On-State Resistance : RDS(on) [] 0.64 Gate - Source Voltage : VGS [V] VGS = 18V Pulsed 0.56 0.48 0.40 0.32 ID = 11A 0.24 0.16 ID = 5A 0.08 0.00 -50 0 50 100 150 200 Junction Temperature : Tj [ºC] Fig.14 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [] 1 0.1 Ta = 150ºC Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC VGS = 18V Pulsed 0.01 1 10 100 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 8/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.15 Typical Capacitance vs. Drain - Source Voltage Fig.16 Coss Stored Energy 16 10000 Capacitance : C [pF] 1000 Coss Stored Energy : EOSS [J] Ta = 25ºC Ciss Coss 100 Crss 10 Ta = 25ºC f = 1MHz VGS = 0V 14 12 10 8 6 4 2 0 1 0.1 1 10 100 0 1000 100 200 300 400 500 600 700 800 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 20 10000 Gate - Source Voltage : VGS [V] tf 1000 Switching Time : t [ns] Ta = 25ºC VDD = 400V VGS = 18V RG = 0 Pulsed 100 td(off) tr 10 td(on) 1 Ta = 25ºC VDD = 600V ID = 5A Pulsed 15 10 5 0 0.1 1 10 100 0 Drain Current : ID [A] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 5 10 15 20 25 30 35 40 45 Total Gate Charge : Qg [nC] 9/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.19 Typical Switching Loss vs. Drain - Source Voltage Fig.20 Typical Switching Loss vs. Drain Current 140 560 Ta = 25ºC ID=5A VGS = 18V/0V RG=0 L=750H 100 80 Ta = 25ºC VDD=600V VGS = 18V/0V RG=0 L=750H 480 Switching Energy : E [J] Switching Energy : E [J] 120 Eon 60 40 Eoff 20 400 320 240 Eon 160 80 Eoff 0 0 200 400 600 800 0 1000 Drain - Source Voltage : VDS [V] 2 4 6 8 10 12 14 16 18 20 Drain Current : ID [A] Fig.21 Typical Switching Loss vs. External Gate Resistance 560 Ta = 25ºC VDD=600V ID=5A VGS = 18V/0V L=750H Switching Energy : E [J] 480 400 320 240 Eon 160 80 Eoff 0 0 5 10 15 20 25 30 External Gate Resistance : RG [] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 10/12 2018.03 - Rev.D Datasheet SCT3160KL Electrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 VGS = 0V Pulsed 1 Ta = 150ºC Ta = 75ºC Ta = 25ºC Ta = 25ºC 0.1 0.01 Ta = 25ºC di / dt = 1100A / us VR = 600V VGS = 0V Pulsed 100 10 0 1 2 3 4 5 6 7 1 8 Source - Drain Voltage : VSD [V] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 10 100 Inverse Diode Forward Current : IS [A] 11/12 2018.03 - Rev.D Datasheet SCT3160KL Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms Eon = ID×VDS Same type device as D.U.T. VDS Irr Eoff = ID×VDS Vsurge D.U.T. ID ID Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform D.U.T. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Downloaded from Arrow.com. 12/12 2018.03 - Rev.D Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications. 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensure the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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