STD18NF25

STB18NF25, STD18NF25 Datasheet Automotive-grade N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in D2PAK and DPAK packages Features TAB Order codes TAB STB18NF25 2 3 2 1 3 STD18NF25 1 DPAK D2PAK D(2, TAB) G(1) • • • • VDS RDS(on)max. ID PTOT 250 V 0.165 Ω 17 A 110 W AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications • Switching applications S(3) AM01475v1_noZen Description These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Product status STB18NF25 STD18NF25 DS6601 - Rev 5 - May 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB18NF25, STD18NF25 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 250 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 17 A Drain current (continuous) at TC = 100 °C 12 A Drain current (pulsed) 68 A Total dissipation at TC = 25 °C 110 W Peak diode recovery voltage slope 10 V/ns -55 to 175 °C ID ID IDM (1) PTOT dv/dt (2) Tj Tstg Operating junction temperature range Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 17 A, di/dt ≤ 200 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS. Table 2. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case Rthj-pcb (1) Thermal resistance junction-pcb Value D2PAK DPAK 1.36 30 Unit °C/W 50 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol IAR EAS DS6601 - Rev 5 Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Value Unit 17 A 170 mJ page 2/22 STB18NF25, STD18NF25 Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 V Min. Typ. 250 1 µA 10 µA ±100 nA 3 4 V 0.140 0.165 Ω Typ. Max. Unit - pF VGS = 0 V, VDS = 250 V, Zero gate voltage drain current TC = 125 °C (1) IGSS Gate body leakage current VDS = 0 V, VGS = ±20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS = 10 V, ID = 8.5 A 2 Unit V VGS = 0 V, VDS = 250 V IDSS Max. 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Co(tr) (1) Co(er) (2) Test conditions VDS = 25 V, f = 1 MHz, VGS = 0 V Equivalent capacitance time related Equivalent capacitance Min. 1000 - 28 - VDS = 0 to 200 V, VGS = 0 V energy related Rg Gate input resistance f = 1 MHz, ID=0 A Qg Total gate charge VDD = 200 V, ID = 17 A, Qgs Gate-source charge Qgd Gate-drain charge VGS = 0 to 10 V (see Figure 16. Test circuit for gate charge behavior) 178 - - 106 - 79 - 2 - 29.3 - 4.5 14.4 - pF Ω nC 1. Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 2. Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS6601 - Rev 5 Parameter Test conditions Turn-on delay time VDD = 125 V, ID = 8.5 A, Rise time RG = 4.7 Ω, VGS = 10 V Turn-off delay time (see Figure 15. Test circuit for resistive load switching times and Figure 20. Switching time waveform) Fall time Min. Typ. Max. Unit - ns 10.2 16.5 - 31.5 9.8 page 3/22 STB18NF25, STD18NF25 Electrical characteristics Table 7. Source drain diode Symbol ISD Parameter Test conditions Source-drain current Typ. Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 17 A, VGS = 0 V trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs Qrr Reverse recovery charge VDD = 60 V Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) trr Reverse recovery time ISD = 17 A, di/dt = 100 A/µs Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C IRRM Reverse recovery current (see Figure 17. Test circuit for inductive load switching and diode recovery times) 68 - - - Max. 17 - ISDM (1) IRRM Min. 1.5 Unit A V 147 ns 0.8 μC 10.6 A 180 ns 1.1 μC 12 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%. DS6601 - Rev 5 page 4/22 STB18NF25, STD18NF25 Electrical characteristics curves 2.1 Electrical characteristics curves Figure 1. Safe operating area for D2PAK Figure 2. Thermal impedance for D2PAK AM05549v1 ID (A) on ) Op er mi ation ted i by n th ma is a x R rea is D 10µs S( 10 100µs Li 1ms 1 10ms Tj=175°C Tc=25°C Sinlge pulse 0.1 10 1 0.1 100 VDS(V) Figure 3. Safe operating area for DPAK AM05561v1 ID (A) Figure 4. Thermal impedance for DPAK GC20460 K Tj=175°C, Tc=25°C Single pulse 100 10µs is ea ar S(on) is th x RD in a m on ati by er ted p O imi L 10 1 0.1 100 100µs 1ms 10-1 10ms 10 1 0.1 100 10-2 10-5 VDS(V) Figure 5. Output characterisics 10-3 AM05550v1 VGS=10V tp (s) 10-1 AM05551v1 ID (A) VDS=10V 7V 40 10-2 Figure 6. Transfer characteristics ID (A) 45 10-4 30 35 6V 30 25 20 20 15 5V 10 10 5 0 DS6601 - Rev 5 0 10 20 VDS(V) 0 0 2 4 6 8 VGS(V) page 5/22 STB18NF25, STD18NF25 Electrical characteristics curves Figure 7. Gate charge vs gate-source voltage Figure 8. Static drain-source on resistance AM05552v1 VDS VGS (V) (V) VDD=200V 12 ID=17A VDS 200 10 150 8 6 100 4 50 2 0 20 10 0 0 Qg (nC) 30 Figure 9. Output capacitance stored energy AM05554v1 Eoss (µJ) Figure 10. Capacitance variations AM05555v1 C (pF) 4.0 3.5 1000 Ciss 3.0 2.5 2.0 100 1.5 Coss 1.0 0.5 0 0 50 100 200 150 VDS(V) Figure 11. Normalized gate threshold voltage vs temperature AM05556v1 VGS(th) (norm) Crss 10 0.1 1 100 10 VDS(V) Figure 12. Normalized on-resistance vs temperature AM05557v1 RDS(on) (norm) 2.5 1.10 1.00 2.0 0.90 0.80 1.5 0.70 0.60 1.0 0.50 0.40 0.30 -100 DS6601 - Rev 5 -50 0 50 100 150 TJ(°C) 0.5 -100 -50 0 50 100 150 TJ(°C) page 6/22 STB18NF25, STD18NF25 Electrical characteristics curves Figure 13. Source-drain diode forward characteristics AM05558v1 VSD (V) TJ=-50°C 1.0 Figure 14. Normalized V(BR)DSS vs temperature AM05559v1 V(BR)DSS (norm) 1.15 0.9 1.10 0.8 1.05 TJ=25°C 0.7 TJ=175°C 0.6 0.95 0.5 0.4 DS6601 - Rev 5 1.00 0 5 10 15 20 ISD(A) 0.90 -100 -50 0 50 100 150 TJ(°C) page 7/22 STB18NF25, STD18NF25 Test circuits 3 Test circuits Figure 15. Test circuit for resistive load switching times Figure 16. Test circuit for gate charge behavior VDD 12 V 2200 + μF 3.3 μF VDD VD VGS 1 kΩ 100 nF RL IG= CONST VGS RG 47 kΩ + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v1 AM01468v1 Figure 17. Test circuit for inductive load switching and diode recovery times D G A D.U.T. S 25 Ω A L A B B 3.3 µF D G + VD 100 µH fast diode B Figure 18. Unclamped inductive load test circuit RG 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi _ pulse width AM01471v1 AM01470v1 Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform V(BR)DSS ton VD td(on) 90% IDM tf 90% 10% 10% 0 ID VDD toff td(off) tr VDD VGS 0 VDS 90% 10% AM01472v1 AM01473v1 DS6601 - Rev 5 page 8/22 STB18NF25, STD18NF25 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS6601 - Rev 5 page 9/22 STB18NF25, STD18NF25 D²PAK (TO-263) type A package information 4.1 D²PAK (TO-263) type A package information Figure 21. D²PAK (TO-263) type A package outline 0079457_25 DS6601 - Rev 5 page 10/22 STB18NF25, STD18NF25 D²PAK (TO-263) type A package information Table 8. D²PAK (TO-263) type A package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.30 8.50 8.70 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS6601 - Rev 5 Typ. 0.40 0° 8° page 11/22 STB18NF25, STD18NF25 D²PAK (TO-263) type A package information Figure 22. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS6601 - Rev 5 page 12/22 STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information 4.2 DPAK (TO-252) type A2 package information Figure 23. DPAK (TO-252) type A2 package outline 0068772_type-A2_rev25 DS6601 - Rev 5 page 13/22 STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information Table 9. DPAK (TO-252) type A2 mechanical data Dim. mm Min. Max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 4.95 E 6.40 E1 5.10 5.20 5.30 e 2.159 2.286 2.413 e1 4.445 4.572 4.699 H 9.35 10.10 L 1.00 1.50 L1 2.60 2.80 3.00 L2 0.65 0.80 0.95 L4 0.60 R V2 DS6601 - Rev 5 Typ. 5.10 5.25 6.60 1.00 0.20 0° 8° page 14/22 STB18NF25, STD18NF25 DPAK (TO-252) type A2 package information Figure 24. DPAK (TO-252) recommended footprint (dimensions are in mm) FP_0068772_25 DS6601 - Rev 5 page 15/22 STB18NF25, STD18NF25 D²PAK and DPAK packing information 4.3 D²PAK and DPAK packing information Figure 25. Tape outline DS6601 - Rev 5 page 16/22 STB18NF25, STD18NF25 D²PAK and DPAK packing information Figure 26. Reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 10. D²PAK tape and reel mechanical data Tape Dim. DS6601 - Rev 5 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 17/22 STB18NF25, STD18NF25 D²PAK and DPAK packing information Table 11. DPAK tape and reel mechanical data Tape Dim. mm mm Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 DS6601 - Rev 5 Reel Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 18.4 22.4 page 18/22 STB18NF25, STD18NF25 Ordering information 5 Ordering information Table 12. Order codes Order code STB18NF25 STD18NF25 DS6601 - Rev 5 Marking 18NF25 Package D2PAK DPAK Packing Tape and reel page 19/22 STB18NF25, STD18NF25 Revision history Table 13. Document revision history Date Version 16-Nov-2009 1 First release. 19-Feb-2010 2 VDS value in Table 8 has been corrected. 3 Updated EAS in Table 4: Avalanche data, Section 4: Package information and Section 4.3: Packing information. 26-Apr-2012 Changes Minor text changes. 10-Sep-2015 4 Updated 4.2: DPAK (TO-252) package information Minor text changes. Removed maturity status indication from cover page. Modified title and features on cover page. 07-May-2018 5 Modified Table 5. Dynamic, Table 6. Switching times and Table 7. Source drain diode. Modified Figure 8. Static drain-source on resistance. Updated Section 4 Package information. Minor text changes. DS6601 - Rev 5 page 20/22 STB18NF25, STD18NF25 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 4.1 D²PAK (TO-263) type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4.2 DPAK (TO-252) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 D²PAK and DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 DS6601 - Rev 5 page 21/22 STB18NF25, STD18NF25 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS6601 - Rev 5 page 22/22