找到“Infineon”相关的规格书共3,759个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SPA11N65C3 | INFINEON[InfineonTechnologiesAG] | SPA11N65C3 - New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated - Infineon Technologies AG | 获取价格 | ||
| SPA08N80C3_09 | INFINEON[InfineonTechnologiesAG] | SPA08N80C3_09 - CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability - Infineon Technologies AG | 获取价格 | ||
| SPA08N80C3 | INFINEON[InfineonTechnologiesAG] | SPA08N80C3 - CoolMOSTM Power Transistor Features Extreme dv/dt rated High peak current capability - Infineon Technologies AG | 获取价格 | ||
| SMBTA42_07 | INFINEON[InfineonTechnologiesAG] | SMBTA42_07 - NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage - Infineon Technologies AG | 获取价格 | ||
| SMBTA14_07 | INFINEON[InfineonTechnologiesAG] | SMBTA14_07 - NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage - Infineon Technologies AG | 获取价格 | ||
| SMBTA06UPN_07 | INFINEON[InfineonTechnologiesAG] | SMBTA06UPN_07 - NPN / PNP Silicon AF Transistor Array High breakdown voltage - Infineon Technologies AG | 获取价格 | ||
| SMBD914_07 | INFINEON[InfineonTechnologiesAG] | SMBD914_07 - Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101 - Infineon Technologies AG | 获取价格 | ||
| SKA06N60 | INFINEON[InfineonTechnologiesAG] | SKA06N60 - Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode - Infineon Technologies AG | 获取价格 | ||
| SN7002W_09 | INFINEON[InfineonTechnologiesAG] | SN7002W_09 - SIPMOSÒ Small-Signal-Transistor Feature N-Channel Enhancement mode - Infineon Technologies AG | 获取价格 | ||
| SN7002N_09 | INFINEON[InfineonTechnologiesAG] | SN7002N_09 - SIPMOS Small-Signal-Transistor Feature Enhancement mode Logic Level - Infineon Technologies AG | 获取价格 | ||
| SIGC81T60SNC | INFINEON[InfineonTechnologiesAG] | SIGC81T60SNC - IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient - Infineon Technologies AG | 获取价格 | ||
| SIGC18T60UN | INFINEON[InfineonTechnologiesAG] | SIGC18T60UN - High Speed IGBT Chip in NPT-technology positive temperature coefficient - Infineon Technologies AG | 获取价格 | ||
| SIGC15T60UN | INFINEON[InfineonTechnologiesAG] | SIGC15T60UN - High Speed IGBT Chip in NPT-technology positive temperature coefficient - Infineon Technologies AG | 获取价格 | ||
| SIGC15T60S | INFINEON[InfineonTechnologiesAG] | SIGC15T60S - IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient - Infineon Technologies AG | 获取价格 | ||
| SIGC156T60SNR2C | INFINEON[InfineonTechnologiesAG] | SIGC156T60SNR2C - IGBT Chip in NPT-technology 600V NPT technology 100μm chip - Infineon Technologies AG | 获取价格 | ||
| SIGC08T60S | INFINEON[InfineonTechnologiesAG] | SIGC08T60S - IGBT3 Chip 600V Trench & Field Stop technology positive temperature coefficient - Infineon Technologies AG | 获取价格 | ||
| SIDC07D60AF6_10 | INFINEON[InfineonTechnologiesAG] | SIDC07D60AF6_10 - Fast switching diode 600V Emitter Controlled technology 70 μm chip - Infineon Technologies AG | 获取价格 | ||
| SIDC03D60F6_10 | INFINEON[InfineonTechnologiesAG] | SIDC03D60F6_10 - Fast switching diode 600V Emitter Controlled technology 70 μm chip - Infineon Technologies AG | 获取价格 | ||
| SGW25N120_09 | INFINEON[InfineonTechnologiesAG] | SGW25N120_09 - Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 | ||
| SGW20N60HS | INFINEON[InfineonTechnologiesAG] | SGW20N60HS - High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation - Infineon Technologies AG | 获取价格 |
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