找到“VGS-25-XX”相关的规格书共376,084个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| ASDM3050KQ-R | Ascend Frequency Devices | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):9mΩ@10V,25A;阈值电压(Vgs(th)@Id):1.4V@250uA;栅极电荷(Qg@Vgs):23nC@10V;输入电容(Ciss@Vds):2nF@15V;反向传输电容(Crss@Vds):160pF@15V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| HYG092N10LS1C2 | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):60A;功率(Pd):62.5W;导通电阻(RDS(on)@Vgs,Id):7.8mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):25nC@10V;输入电容(Ciss@Vds):2.348nF@50V;反向传输电容(Crss@Vds):12.4pF@50V;工作温度:+175℃@(Tj); | 获取价格 | ||
| BUK7613-100E,118 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):72A;功率(Pd):182W;导通电阻(RDS(on)@Vgs,Id):10.2mΩ@10V,20A;阈值电压(Vgs(th)@Id):3V@1mA;栅极电荷(Qg@Vgs):69.4nC@10V;输入电容(Ciss@Vds):3.4nF@20V;反向传输电容(Crss@Vds):225pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| IRF9Z34NS-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):48mΩ@10V,35A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| MS5N100FD | MASPOWER | 类型:N沟道;漏源电压(Vdss):1kV;连续漏极电流(Id):5A;功率(Pd):68W;导通电阻(RDS(on)@Vgs,Id):3.5Ω@10V,1.75A;阈值电压(Vgs(th)@Id):4.5V@100μA;栅极电荷(Qg@Vgs):42nC;输入电容(Ciss@Vds):1.154nF;反向传输电容(Crss@Vds):21.3pF;工作温度:-55℃~+175℃; | 获取价格 | ||
| VBL165R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):2.1Ω@10V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| DMP3099L-7-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-30V;连续漏极电流(Id):-5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@-10V,-5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| 2SJ168-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):500mA;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,0.5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AP2310N-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):4A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):85mΩ@10V,4A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IRLML6401GTRPBF-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):5A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):43mΩ@4.5V,5A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| DMC2038LVT-7-F-VB | VBsemi Electronics Co. Ltd | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AO6601-VB | VBsemi Electronics Co. Ltd | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSL302SN-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FDC658AP-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IRLR3636TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):97A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):6.3mΩ@10V,97A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IRFR120NTRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):114mΩ@10V,15A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AP9575GM-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):50mΩ@10V,8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| APM2309AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FDZ1905PZ | Murata Manufacturing Co., Ltd. | 类型:双P沟道(共漏);漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):1.5W;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):700mV@250mA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| MSP430F6724IPZR | Texas Instruments | CPUXV2 MSP430F6xx Microcontroller IC 16-Bit 25MHz 96KB (96K x 8) FLASH 100-LQFP (14x14) | 获取价格 |
