找到“bts650p”相关的规格书共6,180个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 1N60G-x-TA3-T | UTC[UnisonicTechnologies] | 1N60G-x-TA3-T - 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET - Unisonic Technologies | 获取价格 | ||
| 1N60G-x-T60-K | UTC[UnisonicTechnologies] | 1N60G-x-T60-K - 1.2 Amps, 600/650 Volts N-CHANNEL MOSFET - Unisonic Technologies | 获取价格 | ||
| 1N60AL-x-T92-K | UTC[UnisonicTechnologies] | 1N60AL-x-T92-K - 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET - Unisonic Technologies | 获取价格 | ||
| 1N60AG-x-T92-K | UTC[UnisonicTechnologies] | 1N60AG-x-T92-K - 0.5 Amps, 600/650 Volts N-CHANNEL MOSFET - Unisonic Technologies | 获取价格 | ||
| FDPF15N65 | FAIRCHILD[FairchildSemiconductor] | FDPF15N65 - 650V N-Channel MOSFET - Fairchild Semiconductor | 获取价格 | ||
| TO-212 | SIRENZA[SIRENZAMICRODEVICES] | TO-212 - Wideband RF/Pulse Transformers.5-650 MHz - SIRENZA MICRODEVICES | 获取价格 | ||
| JS6862. | Amphenol Corporation | AMPHENOL ADVANCED SENSORS - JS6862. - SELF-ADHERING SURFACE TEMP SENSOR, 650MM | 获取价格 | ||
| DG120X07T2 | Jiaxing Starpower Semiconductor Co., Ltd. | STARPOWER - DG120X07T2 - IGBT, 240 A, 1.3 V, 1.25 kW, 650 V, TO-247 Plus, 3 Pins | 获取价格 | ||
| B78148S1123K000 | TDK Corporation | 电感值:12uH;精度:±10%;额定电流:650mA;饱和电流(Isat):-; | 获取价格 | ||
| AIUR-08-391K | Abracon LLC. | Fixed Ind 390Uh 860Ma 650 Mohm / Bulk Rohs Compliant: Yes | 获取价格 | ||
| AISC-0603F-R65J-T | Abracon LLC. | Fixed Ind 650Nh 350Ma 610 Mohm / Tape & Reel (Tr) Rohs Compliant: Yes | 获取价格 | ||
| 1600-0055-UK | Ansmann | ANSMANN - 1600-0055-UK - WORK LIGHT, LED, 330LM, 650M, BLACK | 获取价格 | ||
| M366S3253BTS-C75 | SAMSUNG[Samsungsemiconductor] | M366S3253BTS-C75 - 32Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD - Samsung semiconductor | 获取价格 | ||
| BTS6163DAUMA1 | Infineon Technologies | BTS6163D是一款高端电源开关，集成了垂直功率场效应管，提供嵌入式保护和诊断功能。TO252-5 5.5~62V | 获取价格 | ||
| BTS50085-1TMA | Infineon Technologies | BTS50085-1TMA是一款高端电源开关，集成了垂直功率场效应管，提供嵌入式保护和诊断功能 TO220-7 5~58V | 获取价格 | ||
| M366S3354BTS | SAMSUNG[Samsungsemiconductor] | M366S3354BTS - SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC - Samsung semiconductor | 获取价格 | ||
| M366S2953BTS-C7A | SAMSUNG[Samsungsemiconductor] | M366S2953BTS-C7A - SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC - Samsung semiconductor | 获取价格 | ||
| B1D10065F | Shenzhen BASiC Semiconductor LTD., | 二极管配置:独立式;直流反向耐压(Vr):650V;平均整流电流(Io):32A;正向压降(Vf):1.43V@10A;反向电流(Ir):70uA@650V; | 获取价格 | ||
| ASD2065P2 | Anbon Semiconductor Co., Ltd. | 二极管配置:1对共阴极;直流反向耐压(Vr):650V;平均整流电流(Io):40A;正向压降(Vf):1.45V@10A;反向电流(Ir):10uA@650V; | 获取价格 | ||
| IDK10G65C5 | Infineon Technologies | 二极管配置:独立式;直流反向耐压(Vr):650V;平均整流电流(Io):10A;正向压降(Vf):1.5V@10A;反向电流(Ir):500nA@650V; | 获取价格 |
