| 1 | MBRA320T3G | 肖特基二极管 SMA(DO-214AC) | 下载 | Guangzhou Tokmas Electronics Co., LTD |
| 2 | MOT4N70D | 电压VDSS700V,导通电阻Rds2.8欧，电荷量Qg20nC，电流ID4A | 下载 | MOT |
| 3 | MOT15N10D | | 下载 | MOT |
| 4 | MOT50N03D | 电压VDSS30V,导通电阻Rds10毫欧，电流ID50A | 下载 | MOT |
| 5 | MOT50N02D | 电压VDSS20V,导通电阻Rds8毫欧，电流ID50A | 下载 | MOT |
| 6 | MPP474J2A0701 | | 下载 | KYET |
| 7 | MAX9101EUK+T | IC COMPARATOR OD SOT23-5 | 下载 | Analog Devices Inc. |
| 8 | MAX919EUK--V+T | IC COMPARATOR NANO 1.8V SOT23-5 | 下载 | Analog Devices Inc. |
| 9 | MAX9648AUK+T | IC COMPARATOR GP SGL SOT23-5 | 下载 | Analog Devices Inc. |
| 10 | MCR100-8 | 可控硅/晶闸管/光电可控硅 SOT89-3 | 下载 | Jiangsu Changjing Electronics Technology Co., Ltd |
| 11 | MD7601B40 | 10uA静态功耗,40V耐压,1A电流输出,高瞬态 | 下载 | Shanghai Mingda Microelectronics Co., Ltd. |
| 12 | MJ11016G | 类型:NPN;集射极击穿电压(Vceo):120V;集电极电流(Ic):30A;功率(Pd):200W;集电极截止电流(Icbo@Vcb):1mA;集电极-发射极饱... | 下载 | Murata Manufacturing Co., Ltd. |
| 13 | MJD340T4G | 晶体管类型:NPN;集射极击穿电压(Vceo):300V;集电极电流(Ic):500mA;功率(Pd):15W;集电极截止电流(Icbo):-;集电极-发射极饱和电... | 下载 | Murata Manufacturing Co., Ltd. |
| 14 | MJD210T4G | 晶体管类型:PNP;集射极击穿电压(Vceo):25V;集电极电流(Ic):5A;功率(Pd):1.4W;直流电流增益(hFE@Ic,Vce):45@2A,1V; | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | MJD200G | 晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):5A;功率(Pd):1.4W; | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | MJD32C | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):3A;功率(Pd):15W; | 下载 | Rubycon Corporation |
| 17 | ME60N03 | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):48.5A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,3... | 下载 | MATSUKI |
| 18 | MPBH103J3A0701 | | 下载 | KYET |
| 19 | MMBT4401LT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | MMBT2222ALT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):225mW; | 下载 | Murata Manufacturing Co., Ltd. |
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