| IPS825-40B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS808-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-08D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-08D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-03I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS2N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):24W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS8N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS54123CS | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS2N65A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS20N50A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD2030ACZ | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS7N80FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):7A;功率(Pd):48W;导通电阻(RDS(on)@Vgs,Id):1.8Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS8N60A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):110W;导通电阻(RDS(on)@Vgs,Id):800mΩ@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):29nC@10V;输入电容(Ciss@Vds):1.253nF@25V;反向传输电容(Crss@Vds):15pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS10N65FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS100N08A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):100A;功率(Pd):198W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS2N65FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS12N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS25N06C4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):36.2W;导通电阻(RDS(on)@Vgs,Id):29mΩ@10V,19A;阈值电压(Vgs(th)@Id):2V@250uA; | | | 获取价格 |
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