| IPS620-30F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS616-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS616-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-06D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-06D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-03U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-03U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS5N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):5A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):1.7Ω@10V,2.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS120N08A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,60A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS2N60A3H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| 3DD13003E1D | Wuxi China Resources Microelectronics Limited | 晶体管类型:1个NPN和1个PNP;集射极击穿电压(Vceo):400V;集电极电流(Ic):1.3A;功率(Pd):800mW;集电极截止电流(Icbo):100uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):400mV@500mA,100mA;直流电流增益(hFE@Ic,Vce):15@200mA,5V;特征频率(fT):5MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS65L83BP | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS10N65FA9HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):850mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS150N03A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):150A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):3.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| CS4N60FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.1Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):14.5nC@10V;输入电容(Ciss@Vds):590pF@25V;反向传输电容(Crss@Vds):4pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS7N65A3R | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS4N65FA9HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS12N60FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):42W;导通电阻(RDS(on)@Vgs,Id):750mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD8227GP | Wuxi China Resources Microelectronics Limited | 功放类型:-;输出功率:-; | | | 获取价格 |
| 3DD13003F1D | Wuxi China Resources Microelectronics Limited | 晶体管类型:1个NPN,1个PNP;集射极击穿电压(Vceo):400V;集电极电流(Ic):1.5A;功率(Pd):800mW;集电极截止电流(Icbo):100uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@500mA,100mA;直流电流增益(hFE@Ic,Vce):15@200mA,5V;特征频率(fT):5MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS1N60A3H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):800mA;功率(Pd):25W;导通电阻(RDS(on)@Vgs,Id):15Ω@10V,400mA;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS45N06A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):45A;功率(Pd):54.3W;导通电阻(RDS(on)@Vgs,Id):16mΩ@10V,20A;阈值电压(Vgs(th)@Id):2V@250uA; | | | 获取价格 |
| 3DD13003E1D-BD | Wuxi China Resources Microelectronics Limited | 晶体管类型:1个NPN和1个PNP;集射极击穿电压(Vceo):400V;集电极电流(Ic):1.3A;功率(Pd):800mW;集电极截止电流(Icbo):100uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):400mV@500mA,100mA;直流电流增益(hFE@Ic,Vce):15@200mA,5V;特征频率(fT):5MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
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