找到“IB2405S”相关的规格书共1,792个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| DTA143XCA | Yangjie Electronic Technology Co., Ltd. | 晶体管类型:1个PNP-预偏置;功率(Pd):200mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):2.5V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):300mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):30@ | 获取价格 | ||
| DTC113ZCA | PSI | 晶体管类型:1个NPN-预偏置;功率(Pd):200mW;集电极电流(Ic):-;集射极击穿电压(Vceo):-;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@10mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):300mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):33@5mA,5V;输入电阻: | 获取价格 | ||
| PDTD114EUX | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):425mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):100mV@50mA,2.5mA;最小输入电压(VI(on)@Ic/Io,Vce/Vo):1.9V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):1V@100uA,5V;输出电压(VO(on)@Io/Ii):-;直流电流增益(hFE@Ic,Vce):70@50mA,5V | 获取价格 | ||
| DTC143EE | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):150mW;集电极电流(Ic):-;集射极击穿电压(Vceo):-;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):20@10mA,5V;输入电阻 | 获取价格 | ||
| DTA144EE | T&C Technology | 晶体管类型:1个PNP-预偏置;功率(Pd):150mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@2mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):68@5mA | 获取价格 | ||
| DTC113ZCA | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):200mW;集电极电流(Ic):-;集射极击穿电压(Vceo):-;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@10mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):300mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):33@5mA,5V;输入电阻: | 获取价格 | ||
| DTC143EE | T&C Technology | 晶体管类型:1个NPN-预偏置;功率(Pd):150mW;集电极电流(Ic):-;集射极击穿电压(Vceo):-;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):20@10mA,5V;输入电阻 | 获取价格 | ||
| DTC143EE | SLKORMICRO Electronics Co., Ltd | 晶体管类型:1个NPN-预偏置;功率(Pd):150mW;集电极电流(Ic):-;集射极击穿电压(Vceo):-;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):20@10mA,5V;输入电阻 | 获取价格 | ||
| MMBT2907A | BORN Semiconductor (Shenzhen) Co. Ltd. | 晶体管类型：PNP 集射极击穿电压(Vceo)：60V 集电极电流(Ic)：600mA 功率(Pd)：250mW 集电极截止电流(Icbo)：20nA 集电极-发射极饱和电压(VCE(sat)@Ic,Ib)：1.6V@500mA,50mA 直流电流增益(hFE@Ic,Vce)：100@150mA,10V 特征频率(fT)：200MHz 工作温度：+150℃@(Tj) transistors,PNP 60V 600mA 250mW,SOT-23 | 获取价格 | ||
| DTA114EL-T92-K | Unisonic Technology Co., Ltd. | 晶体管类型:1个PNP-预偏置;功率(Pd):625mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@10mA,300mV;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,500uA;直流电流增益(hFE@Ic,Vce):30@5mA,5 | 获取价格 | ||
| PDTD113ZUX | Rubycon Corporation | 晶体管类型:1个NPN-预偏置;功率(Pd):425mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):100mV@50mA,2.5mA;最小输入电压(VI(on)@Ic/Io,Vce/Vo):800mV@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):600mV@100uA,5V;输出电压(VO(on)@Io/Ii):-;直流电流增益(hFE@Ic,Vce):70@50m | 获取价格 | ||
| DTA144EE | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 晶体管类型:1个PNP-预偏置;功率(Pd):150mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@2mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,0.5mA;直流电流增益(hFE@Ic,Vce):68@5mA | 获取价格 |
