找到ID8155B相关的规格书共8,200
型号厂商描述数据手册替代料参考价格
SI4825DDY-T1-GE3Vishay Intertechnology, Inc.MOSFETs P-Channel VDS=30V VGS=±25V ID=14.9A RDS(ON)=12.5mΩ@10V SOIC8_150MIL获取价格
BSS123TADiodes IncorporatedN沟道增强型场效应晶体管SOT23 VDS=100V ID=0.17A VGS=±20V获取价格
38-00-2400MOLEX3[MolexElectronicsLtd.] 38-00-2400 - 2.54mm (.100") Pitch KK® Connector, IDT, High Pressure Cat Ear Contact System, Green ID Stripe, 10 Circuit - Molex Electronics Ltd.获取价格
38-00-2399MOLEX3[MolexElectronicsLtd.] 38-00-2399 - 2.54mm (.100") Pitch KK Connector, IDT, High Pressure Cat Ear Contact System, Green ID Stripe - Molex Electronics Ltd.获取价格
38-00-2396MOLEX3[MolexElectronicsLtd.] 38-00-2396 - 2.54mm (.100") Pitch KK Connector, IDT, High Pressure Cat Ear Contact System, Green ID Stripe - Molex Electronics Ltd.获取价格
SR176-SBN18STMICROELECTRONICS[STMicroelectronics] SR176-SBN18 - 13.56 MHz Short Range Contactless Memory Chip 176 bit USER EEPROM and 64-bit Unique ID - STMicroelectronics获取价格
NTZD3154NT1GON SemiconductorMOS管 Dual N-Channel VDS=20V VGS=±7V ID=540mA RDS(ON)=550mΩ@4.5V SOT563获取价格
LRI64_07STMICROELECTRONICS[STMicroelectronics] LRI64_07 - Memory TAG IC at 13.56 MHz, with 64-bit Unique ID and WORM user area, ISO15693 and ISO18000-3 Mode 1 compliant - STMicroelectronics获取价格
LRI64-A7TSTMICROELECTRONICS[STMicroelectronics] LRI64-A7T - Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO15693 and ISO18000-3 Mode 1 Compliant - STMicroelectronics获取价格
LRI64-A6S2USTMICROELECTRONICS[STMicroelectronics] LRI64-A6S2U - Memory TAG IC at 13.56 MHz, with 64-bit Unique ID and WORM user area, ISO15693 and ISO18000-3 Mode 1 compliant - STMicroelectronics获取价格
LRI64STMICROELECTRONICS[STMicroelectronics] LRI64 - Memory TAG IC, 64-bit Unique ID with WORM User Area 13.56MHz, ISO15693 and ISO18000-3 Mode 1 Compliant - STMicroelectronics获取价格
FB43-110-RCBourns Inc.Solid Free Hanging Ferrite Core ID 0.060" Dia (1.52mm) OD 0.155" Dia (3.93mm) Length 0.143" (3.63mm)获取价格
MMBFJ176Murata Manufacturing Co., Ltd.FET类型:-;栅源击穿电压(V(BR)GSS):-;栅源截止电压(VGS(off)@ID):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;输入电容(Ciss@Vds):-;功率(Pd):-;获取价格
APM2701ACC-TRG-VBVBsemi Electronics Co. LtdMOS管 N-Channel, P-Channel VDS=20V VGS=±20V ID=5.5A,3.4A RDS(ON)=30mΩ,79mΩ@4.5V SOT23-6获取价格
MP150N08MINOS类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):150A;功率(Pd):210W;工作温度:-55℃~+175℃@(Tj);获取价格
J113Murata Manufacturing Co., Ltd.FET类型:-;栅源击穿电压(V(BR)GSS):-;栅源截止电压(VGS(off)@ID):-;饱和漏源电流(Idss@Vds,Vgs=0):-;漏源导通电阻(RDS(on)):-;输入电容(Ciss@Vds):-;功率(Pd):-;获取价格
AO7800VBsemi Electronics Co. LtdMOS管 Dual N-Channel VDS=20V VGS=±12V ID=2.3A RDS(ON)=86mΩ@4.5V SOT363获取价格
DMZ1315EARK Microelectronics Co., Ltd.MOS管 N-Channel VDS=130V VGS=±30V ID=100mA RDS(ON)=30Ω@50mA SOT23获取价格
DMX1315ELARK Microelectronics Co., Ltd.MOS管 N-Channel VDS=130V VGS=±30V ID=100mA RDS(ON)=30Ω@50mA SOT89获取价格
AKF30N10SARK Microelectronics Co., Ltd.MOS管 N-Channel VDS=30V VGS=±20V ID=45A RDS(ON)=12mΩ@10A,4.5V PDFN3333获取价格