找到“MJ11013”相关的规格书共345个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SOGC2001MJ | VISHAY[VishaySiliconix] | SOGC2001MJ - Thick Film Resistor Networks, Dual-In-Line Small Outline Molded Dip, 01, 03, 05 Schematics - Vishay Siliconix | 获取价格 | ||
| SOGC1603MJ | VISHAY[VishaySiliconix] | SOGC1603MJ - Thick Film Resistor Networks, Dual-In-Line Small Outline Molded Dip, 01, 03, 05 Schematics - Vishay Siliconix | 获取价格 | ||
| SOGC1601MJ | VISHAY[VishaySiliconix] | SOGC1601MJ - Thick Film Resistor Networks, Dual-In-Line Small Outline Molded Dip, 01, 03, 05 Schematics - Vishay Siliconix | 获取价格 | ||
| FGY75T120SQDN | Murata Manufacturing Co., Ltd. | IGBT类型:场截止;功率(Pd):790W;集射极击穿电压(Vces):1200V;集电极电流(Ic):150A;集电极脉冲电流(Icm):300A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):6.25mJ;关断损耗(Eoff):1.96mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGD5T120SH | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):69W;集射极击穿电压(Vces):1200V;集电极电流(Ic):10A;集电极脉冲电流(Icm):12.5A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.247mJ;关断损耗(Eoff):0.094mJ;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| FGH75T65SHD-F155 | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):455W;集射极击穿电压(Vces):650V;集电极电流(Ic):150A;集电极脉冲电流(Icm):225A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):2.4mJ;关断损耗(Eoff):0.72mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGH75T65SQDT-F155 | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):375W;集射极击穿电压(Vces):650V;集电极电流(Ic):150A;集电极脉冲电流(Icm):300A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.3mJ;关断损耗(Eoff):0.07mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| FGH50N3 | Murata Manufacturing Co., Ltd. | IGBT类型:-;功率(Pd):463W;集射极击穿电压(Vces):300V;集电极电流(Ic):75A;集电极脉冲电流(Icm):240A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.13mJ;关断损耗(Eoff):0.092mJ;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| FGAF40S65AQ | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):94W;集射极击穿电压(Vces):650V;集电极电流(Ic):80A;集电极脉冲电流(Icm):160A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.132mJ;关断损耗(Eoff):0.062mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| HGTD7N60C3S9A | Murata Manufacturing Co., Ltd. | IGBT类型:-;功率(Pd):60W;集射极击穿电压(Vces):600V;集电极电流(Ic):14A;集电极脉冲电流(Icm):56A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.165mJ;关断损耗(Eoff):0.6mJ;工作温度:-40℃~+150℃@(Tj); | 获取价格 | ||
| FGD3N60LSDTM | Murata Manufacturing Co., Ltd. | IGBT类型:-;功率(Pd):40W;集射极击穿电压(Vces):600V;集电极电流(Ic):6A;集电极脉冲电流(Icm):25A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.25mJ;关断损耗(Eoff):1mJ;工作温度:-; | 获取价格 | ||
| RI820.5WC47MJ | TOKEN[TokenElectronicsIndustryCo.,Ltd.] | RI820.5WC47MJ - RI82 Thick Film High Voltage Resistors - Token Electronics Industry Co., Ltd. | 获取价格 | ||
| RI820.25WC47MJ | TOKEN[TokenElectronicsIndustryCo.,Ltd.] | RI820.25WC47MJ - RI82 Thick Film High Voltage Resistors - Token Electronics Industry Co., Ltd. | 获取价格 | ||
| RI820.125WC470MJ | TOKEN[TokenElectronicsIndustryCo.,Ltd.] | RI820.125WC470MJ - RI82 Thick Film High Voltage Resistors - Token Electronics Industry Co., Ltd. | 获取价格 | ||
| SOGC2000MJ | VISHAY[VishaySiliconix] | SOGC2000MJ - Thick Film Resistor Networks, Dual-In-Line Small Outline Molded Dip, 01, 03, 05 Schematics - Vishay Siliconix | 获取价格 | ||
| TA35-CBT4MJ10C0 | SCHURTER[SchurterInc.] | TA35-CBT4MJ10C0 - IEC Appliance Inlet C14 with Circuit Breaker TA35 2-pole - Schurter Inc. | 获取价格 | ||
| D38999--24MJ8SN | Amphenol Corporation | AMPHENOL AEROSPACE - D38999/24MJ8SN - Circular Connector, MIL-DTL-38999 Series III, Jam Nut Receptacle, 8 Contacts, Crimp Socket | 获取价格 | ||
| D38999--24MJ11PN | Amphenol Corporation | AMPHENOL AEROSPACE - D38999/24MJ11PN - Circular Connector, MIL-DTL-38999 Series III, Jam Nut Receptacle, 11 Contacts, Crimp Pin, Threaded | 获取价格 | ||
| D38999--24MJ35SA | Amphenol Corporation | AMPHENOL AEROSPACE - D38999/24MJ35SA - Circular Connector, MIL-DTL-38999 Series III, Jam Nut Receptacle, 128 Contacts, Crimp Socket | 获取价格 | ||
| FGH60T65SQD-F155 | Murata Manufacturing Co., Ltd. | IGBT类型:沟槽场截止;功率(Pd):333W;集射极击穿电压(Vces):650V;集电极电流(Ic):120A;集电极脉冲电流(Icm):240A;栅极阈值电压(Vge(th)@Ic):-;输入电容(Cies@Vce):-;导通损耗(Eon):0.227mJ;关断损耗(Eoff):0.1mJ;工作温度:-55℃~+175℃@(Tj); | 获取价格 |
