找到“TH1386”相关的规格书共6,488个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| HP640 | HL | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):18A;功率(Pd):104W;导通电阻(RDS(on)@Vgs,Id):150mΩ@10V,9A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HF12N60 | HL | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):51W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HB3710P | HL | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):70A;功率(Pd):200W;导通电阻(RDS(on)@Vgs,Id):20mΩ@10V,35A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| BSC057N03LS G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IAUC60N04S6L039 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSC079N03LSC G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AIMW120R045M1 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IAUC70N08S5N074 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSZ12DN20NS3 G | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):11.3A;功率(Pd):50W;导通电阻(RDS(on)@Vgs,Id):125mΩ@10V,5.7A;阈值电压(Vgs(th)@Id):4V@25uA; | 获取价格 | ||
| BSD214SN H6327 | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):1.5A;功率(Pd):500mW;导通电阻(RDS(on)@Vgs,Id):140mΩ@4.5V,1.5A;阈值电压(Vgs(th)@Id):1.2V@3.7uA; | 获取价格 | ||
| BSC080N03MS G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSC030N03MS G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IAUC100N04S6N028 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSB028N06NN3 G | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):22A;功率(Pd):2.2W;导通电阻(RDS(on)@Vgs,Id):2.8mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@102μA; | 获取价格 | ||
| AUIRF1010ZSTRL | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSZ014NE2LS5IF | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSC037N08NS5T | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):100A;功率(Pd):3W;导通电阻(RDS(on)@Vgs,Id):5.3mΩ@6V,25A;阈值电压(Vgs(th)@Id):3.8V@72uA; | 获取价格 | ||
| BSF450NE7NH3 | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):75V;连续漏极电流(Id):15A;功率(Pd):2.2W;导通电阻(RDS(on)@Vgs,Id):62mΩ@7V,4A;阈值电压(Vgs(th)@Id):3.8V@8μA; | 获取价格 | ||
| BSC079N10NS G | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):13.4A;功率(Pd):156W;导通电阻(RDS(on)@Vgs,Id):7.9mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@110uA; | 获取价格 | ||
| BSC046N02KS G | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 |
