找到“TH1386”相关的规格书共6,488个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| FDD6N50TM-F085 | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FDD4243 | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FDC8886 | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FCPF7N60NT | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| TSU5N60M | Shenzhen Truesemi Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4.5A;功率(Pd):48W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2.25A;阈值电压(Vgs(th)@Id):5V@250uA; | 获取价格 | ||
| TSD16N25M | Shenzhen Truesemi Semiconductor Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSC010N04LSI | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FQT4N20LTF | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):850mA;功率(Pd):2.2W;导通电阻(RDS(on)@Vgs,Id):1.35Ω@10V,425mA;阈值电压(Vgs(th)@Id):2V@250uA; | 获取价格 | ||
| HY1906B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120A;功率(Pd):188W;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,60A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| NCE30H29D | WUXI NCE POWER CO., Ltd. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):290A;功率(Pd):270W;导通电阻(RDS(on)@Vgs,Id):1.8mΩ@10V,160A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| HY1607B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):80A;功率(Pd):115W;导通电阻(RDS(on)@Vgs,Id):7.8mΩ@10V,40A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBJ2658 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):7A;功率(Pd):10.4W;导通电阻(RDS(on)@Vgs,Id):65mΩ@4.5V,2A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| 1N65G-AA3-R | Unisonic Technology Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):1.2A;功率(Pd):8W;导通电阻(RDS(on)@Vgs,Id):12.5Ω@10V,600mA;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| LSE80R680GT | Lonten Semiconductor Co.,Ltd | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB090N06N3 G | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):50A;功率(Pd):71W;导通电阻(RDS(on)@Vgs,Id):9mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@34uA; | 获取价格 | ||
| SE80130G | SINO-IC | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):130A;功率(Pd):160W;导通电阻(RDS(on)@Vgs,Id):4.3mΩ@10V,60A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| VBL1101M | VBsemi Electronics Co. Ltd | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| VBL1203M | VBsemi Electronics Co. Ltd | 类型:-;漏源电压(Vdss):200V;连续漏极电流(Id):10A;功率(Pd):74W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,5.4A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBL1310 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):50A;功率(Pd):120W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| LSE65R380GF | Lonten Semiconductor Co.,Ltd | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):11A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):380mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 |
