找到“U08A30”相关的规格书共188,701个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| 08-50-0135 | MOLEX1[MolexElectronicsLtd.] | 08-50-0135 - KK® Cat Ear Crimp Terminal 4809, 22-30 AWG, Tin, Bag - Molex Electronics Ltd. | 获取价格 | ||
| MBR1030CT_08 | MCC[MicroCommercialComponents] | MBR1030CT_08 - 10 Amp Schott ky Barrier Rectifier 30-60 Volts - Micro Commercial Components | 获取价格 | ||
| SPD30N03S2L-20_08 | INFINEON[InfineonTechnologiesAG] | SPD30N03S2L-20_08 - OptiMOS Power-Transistor Feature Enhancement mode Logic Level - Infineon Technologies AG | 获取价格 | ||
| MSAS-08PMMS-SF8B30 | Amphenol Corporation | AMPHENOL LTW - MSAS-08PMMS-SF8B30 - SENSOR CORD, 8P M12 PLUG-FREE END, 11.8" | 获取价格 | ||
| MSAS-08PMMS-SF8C30 | Amphenol Corporation | AMPHENOL LTW - MSAS-08PMMS-SF8C30 - SENSOR CORD, 8P M12 PLUG-FREE END, 11.8" | 获取价格 | ||
| BESM08MI-PSC40B-S49G | Balluff | BALLUFF - BESM08MI-PSC40B-S49G - Inductive Proximity Sensor, Cylindrical, BES Series, M8, 4 mm, PNP, 12 V to 30 V, Connector | 获取价格 | ||
| STS8DNH3LL_08 | STMICROELECTRONICS[STMicroelectronics] | STS8DNH3LL_08 - Dual n-channel 30 V - 0.018 Ω - 8 A - SO-8 low gate charge STripFET™ III Power MOSFET - STMicroelectronics | 获取价格 | ||
| SPD30N03S2L-07_08 | INFINEON[InfineonTechnologiesAG] | SPD30N03S2L-07_08 - OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated - Infineon Technologies AG | 获取价格 | ||
| HMC383LC4_08 | HITTITE[HittiteMicrowaveCorporation] | HMC383LC4_08 - GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz - Hittite Microwave Corporation | 获取价格 | ||
| FDMA520PZ_08 | FAIRCHILD[FairchildSemiconductor] | FDMA520PZ_08 - Single P-Channel PowerTrench® MOSFET -20V, -7.3A, 30mΩ - Fairchild Semiconductor | 获取价格 | ||
| SMKDS 3-- 3-5,08 | Phoenix Contact | PHOENIX CONTACT - SMKDS 3/ 3-5,08 - Wire-To-Board Terminal Block, 5.08 mm, 3 Ways, 30 AWG, 12 AWG, 4 mm², Screw | 获取价格 | ||
| 08-52-0105 | MOLEX1[MolexElectronicsLtd.] | 08-52-0105 - KK® Cat Ear Crimp Terminal 8088, 22-30 AWG, Tin, Reel - Molex Electronics Ltd. | 获取价格 | ||
| SPD30P06P_08 | INFINEON[InfineonTechnologiesAG] | SPD30P06P_08 - SIPMOSÒ Power-Transistor Features Enhancement mode Avalanche rated - Infineon Technologies AG | 获取价格 | ||
| CCT30L-08 | CYNERGY3[Cynergy3Co] | CCT30L-08 - Triac Die Glass Passivated Junction Protection for Superior Blocking Voltage and Stability - Cynergy3 Co | 获取价格 | ||
| RD06HHF1_08 | MITSUBISHI[MitsubishiElectricSemiconductor] | RD06HHF1_08 - RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W - Mitsubishi Electric Semiconductor | 获取价格 | ||
| SPD30N03S2L-10_08 | INFINEON[InfineonTechnologiesAG] | SPD30N03S2L-10_08 - OptiMOS Power-Transistor Feature N-Channel Enhancement mode - Infineon Technologies AG | 获取价格 | ||
| IR02BH120K | Vishay Intertechnology, Inc. | IR-2 12 10% B08 | 获取价格 | ||
| IRF01BH470K | Vishay Intertechnology, Inc. | IRF-1 47 10% B08 | 获取价格 | ||
| IRF01BH5R6K | Vishay Intertechnology, Inc. | IRF-1 5.6 10% B08 | 获取价格 | ||
| IRF03BH1R8K | Vishay Intertechnology, Inc. | IRF-3 1.8 10% B08 | 获取价格 |
