找到“mos fet”相关的规格书共12,041个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SSM6J212FE | TOSHIBA[ToshibaSemiconductor] | SSM6J212FE - Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) - Toshiba Semiconductor | 获取价格 | ||
| TPCF8102_07 | TOSHIBA[ToshibaSemiconductor] | TPCF8102_07 - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) - Toshiba Semiconductor | 获取价格 | ||
| R2J25953-00 | RENESAS[RenesasTechnologyCorp] | R2J25953-00 - H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| RJM0306JSP_10 | RENESAS[RenesasTechnologyCorp] | RJM0306JSP_10 - Silicon N / P Channel Power MOS FET High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK5003DPD-00-Q2 | RENESAS[RenesasTechnologyCorp] | RJK5003DPD-00-Q2 - Silicon N Channel Power MOS FET High Speed Power Switching Use - Renesas Technology Corp | 获取价格 | ||
| RJK0629DPE-00-J3 | RENESAS[RenesasTechnologyCorp] | RJK0629DPE-00-J3 - N Channel Power MOS FET High-Speed Switching Use - Renesas Technology Corp | 获取价格 | ||
| RJK03H1DPA | RENESAS[RenesasTechnologyCorp] | RJK03H1DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK03E4DPA-00-J53 | RENESAS[RenesasTechnologyCorp] | RJK03E4DPA-00-J53 - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK03C2DPB | RENESAS[RenesasTechnologyCorp] | RJK03C2DPB - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK03A4DPA-00-J53 | RENESAS[RenesasTechnologyCorp] | RJK03A4DPA-00-J53 - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0389DPA-00-J0 | RENESAS[RenesasTechnologyCorp] | RJK0389DPA-00-J0 - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0389DPA | RENESAS[RenesasTechnologyCorp] | RJK0389DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0381DPA_10 | RENESAS[RenesasTechnologyCorp] | RJK0381DPA_10 - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0381DPA-00-J53 | RENESAS[RenesasTechnologyCorp] | RJK0381DPA-00-J53 - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0380DPA | RENESAS[RenesasTechnologyCorp] | RJK0380DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0213DPA | RENESAS[RenesasTechnologyCorp] | RJK0213DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| RJK0206DPA-00-J53 | RENESAS[RenesasTechnologyCorp] | RJK0206DPA-00-J53 - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching - Renesas Technology Corp | 获取价格 | ||
| BB504C | RENESAS[RenesasTechnologyCorp] | BB504C - Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| BB502CBS-TL-E | RENESAS[RenesasTechnologyCorp] | BB502CBS-TL-E - Built in Biasing Circuit MOS FET IC UHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| BB501CAS-TL-E | RENESAS[RenesasTechnologyCorp] | BB501CAS-TL-E - Built in Biasing Circuit MOS FET IC UHF RF Amplifier - Renesas Technology Corp | 获取价格 |
