找到“mos fet”相关的规格书共12,041个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| HAT2285WP_10 | RENESAS[RenesasTechnologyCorp] | HAT2285WP_10 - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| HAT2285WP-EL-E | RENESAS[RenesasTechnologyCorp] | HAT2285WP-EL-E - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| HAT2285WP | RENESAS[RenesasTechnologyCorp] | HAT2285WP - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| HAT2215RJ-EL-E | RENESAS[RenesasTechnologyCorp] | HAT2215RJ-EL-E - Silicon N Channel Power MOS FET High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| HAT2058RJ-EL-E | RENESAS[RenesasTechnologyCorp] | HAT2058RJ-EL-E - Silicon N Channel Power MOS FET High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| HAT1126RJ-EL-E | RENESAS[RenesasTechnologyCorp] | HAT1126RJ-EL-E - Silicon P Channel Power MOS FET High Speed Power Switching - Renesas Technology Corp | 获取价格 | ||
| 2SJ173 | NJSEMI[NewJerseySemi-ConductorProducts,Inc.] | 2SJ173 - SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING - New Jersey Semi-Conductor Products, Inc. | 获取价格 | ||
| TBB1017 | RENESAS[RenesasTechnologyCorp] | TBB1017 - Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| TBB1010KMTL-E | RENESAS[RenesasTechnologyCorp] | TBB1010KMTL-E - Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| TBB1010 | RENESAS[RenesasTechnologyCorp] | TBB1010 - Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| TBB1005EMTL-E | RENESAS[RenesasTechnologyCorp] | TBB1005EMTL-E - Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| TBB1002 | RENESAS[RenesasTechnologyCorp] | TBB1002 - Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier - Renesas Technology Corp | 获取价格 | ||
| RD06HVF1 | MITSUBISHI[MitsubishiElectricSemiconductor] | RD06HVF1 - RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz,6W - Mitsubishi Electric Semiconductor | 获取价格 | ||
| RD06HHF1_08 | MITSUBISHI[MitsubishiElectricSemiconductor] | RD06HHF1_08 - RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W - Mitsubishi Electric Semiconductor | 获取价格 | ||
| FX50SMJ-06-A8 | RENESAS[RenesasTechnologyCorp] | FX50SMJ-06-A8 - High-Speed Switching Use Pch Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| FX50SMJ-06 | RENESAS[RenesasTechnologyCorp] | FX50SMJ-06 - High-Speed Switching Use Pch Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| FX30ASJ-03 | RENESAS[RenesasTechnologyCorp] | FX30ASJ-03 - High-Speed Switching Use Pch Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| FX20KMJ-03-A8 | RENESAS[RenesasTechnologyCorp] | FX20KMJ-03-A8 - High-Speed Switching Use Pch Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| FX20ASJ-2-T13 | RENESAS[RenesasTechnologyCorp] | FX20ASJ-2-T13 - High-Speed Switching Use Pch Power MOS FET - Renesas Technology Corp | 获取价格 | ||
| FS70VSJ-06F | RENESAS[RenesasTechnologyCorp] | FS70VSJ-06F - High-Speed Switching Use Nch Power MOS FET - Renesas Technology Corp | 获取价格 |
