找到“ID8155”相关的规格书共8,200个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| IPB65R095C7 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSP89,115 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| NCEP85T25D | WUXI NCE POWER CO., Ltd. | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):250A;功率(Pd):300W;导通电阻(RDS(on)@Vgs,Id):2.6mΩ@10V,100A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| IPN70R1K4P7S | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):4A;功率(Pd):6.2W;导通电阻(RDS(on)@Vgs,Id):1.4Ω@10V,700mA;阈值电压(Vgs(th)@Id):3.5V@40uA; | 获取价格 | ||
| IPN70R900P7S | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):6A;功率(Pd):6.5W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,1.1A;阈值电压(Vgs(th)@Id):3.5V@60uA; | 获取价格 | ||
| NCEP12T12D | WUXI NCE POWER CO., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB65R190C7 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB65R190CFDA | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AOB254L-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):45A;功率(Pd):3.7W;导通电阻(RDS(on)@Vgs,Id):35mΩ@10V,15A;阈值电压(Vgs(th)@Id):6V@250uA; | 获取价格 | ||
| AOD536 | ElecSuper | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):46A;功率(Pd):37.5W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V,20.0A;阈值电压(Vgs(th)@Id):1.5V@250uA; | 获取价格 | ||
| AP18N20GH | APEC | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB120N06S4-H1 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HB3510P | HL | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):38mΩ@10V,15A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBL1105 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):110A;功率(Pd):375W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBL1405 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):100A;功率(Pd):150W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,100A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| PTY88N07 | ShenZhen Puolop Electronics co.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| LSE70R380GT | Lonten Semiconductor Co.,Ltd | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):11A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):380mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| IPB80N06S4-05 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB024N08N5 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AD2N60S | Anbon Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):34W;导通电阻(RDS(on)@Vgs,Id):4.4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 |
