找到“VGS-25-XX”相关的规格书共376,084个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| FDS9435A | ON Semiconductor | MOS管 N-Channel VDS=30V VGS=±25V ID=5.3A RDS(ON)=50mΩ@10V SOIC8_150MIL | 获取价格 | ||
| NCE30P25S | WUXI NCE POWER CO., Ltd. | MOS管 P-Channel VDS=30V VGS=±20V ID=25A RDS(ON)=14mΩ@4.5V SOIC8_150MIL | 获取价格 | ||
| CSD16410Q5A | Texas Instruments | MOS管 N-Channel VDS=25V VGS=-12V,+16V ID=59A RDS(ON)=8.5mΩ@10V VSONP8 | 获取价格 | ||
| FDS4935BZ | ON Semiconductor | MOS管 Dual P-Channel VDS=30V VGS=±25V ID=6.9A RDS(ON)=22mΩ@10V SOIC8_150MIL | 获取价格 | ||
| BUK9Y4R8-60E,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):100A;功率(Pd):238W;导通电阻(RDS(on)@Vgs,Id):4.1mΩ@25,10V; | 获取价格 | ||
| BUK9629-100B,118 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):46A;功率(Pd):157W;导通电阻(RDS(on)@Vgs,Id):27mΩ@25A,10V; | 获取价格 | ||
| TPS77533PWPR | Texas Instruments | 带复位输出的TPS775xx，带PG输出的TPS776xx快速瞬态响应500mA低压差稳压器 | 获取价格 | ||
| TPS75325-EP|TPS75318-EP|TPS75301-EP|TPS75333-EP | Texas Instruments | TPS751xx-EP w/Power Good TPS753xx-EP w/Reset Fast-Trans-Resp 1.5-A Low-Dropout V datasheet | 获取价格 | ||
| LC66PG5XX | SANYO[SanyoSemiconDevice] | LC66PG5XX - EPROM-Mountable Type 4-bit Microcomputer Evaluation Chip for The LC665XX Series Microcomputers - Sanyo Semicon Device | 获取价格 | ||
| C505CA4EMCAKXUMA1 | Infineon Technologies | C500 C5xx/C8xx Microcontroller IC 8-Bit 20MHz 32KB (32K x 8) OTP 44-MQFP (10x10) | 获取价格 | ||
| TWR-56F8200 | NXP Semiconductors | MC56F823xx, MC56F827xx Freescale Tower System Platform DSP 56800EX Core Embedded Evaluation Board | 获取价格 | ||
| JCS10N65ST-S-AR | Jilin Sino-Microelectronics Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):9.5A;功率(Pd):178W;导通电阻(RDS(on)@Vgs,Id):850mΩ@10V,4.75A;阈值电压(Vgs(th)@Id):4.5V@250uA;栅极电荷(Qg@Vgs):34nC@10V;输入电容(Ciss@Vds):1.61nF@25V;反向传输电容(Crss@Vds):20pF@25V;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| HYG064N08NA1B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):120A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):6.4mΩ@10V,40A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):65nC@10V;输入电容(Ciss@Vds):3.08nF@25V;反向传输电容(Crss@Vds):205pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| HYG025N06LS2B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):145A;功率(Pd):125W;导通电阻(RDS(on)@Vgs,Id):2.8mΩ@10V,40A;阈值电压(Vgs(th)@Id):2.1V@250uA;栅极电荷(Qg@Vgs):69.8nC@10V;输入电容(Ciss@Vds):4.381nF@25V;反向传输电容(Crss@Vds):10pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| HYG055N08NS1B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):120A;功率(Pd):187.5W;导通电阻(RDS(on)@Vgs,Id):5.3mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):60nC@10V;输入电容(Ciss@Vds):3.66nF@25V;反向传输电容(Crss@Vds):15pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| KNB3610A | KIA | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):60A;导通电阻(RDS(on)@Vgs,Id):17mΩ@10V,20A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):82nC@10V;输入电容(Ciss@Vds):3.83nF@25V;反向传输电容(Crss@Vds):208pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| HSU28N15 | HUASHUO SEMICONDUCTOR | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):30A;功率(Pd):115W;导通电阻(RDS(on)@Vgs,Id):35mΩ@10V,20A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):40nC@4.5V;输入电容(Ciss@Vds):3.755nF@25V;反向传输电容(Crss@Vds):160pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| ME10N15 | MATSUKI | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):7.6A;功率(Pd):32.1W;导通电阻(RDS(on)@Vgs,Id):285mΩ@10V,7A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):17.5nC@10V;输入电容(Ciss@Vds):538pF@25V;反向传输电容(Crss@Vds):21pF@25V;工作温度:-55℃~+150℃@(Tj); | 获取价格 | ||
| HYG067N07NQ1D | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):68V;连续漏极电流(Id):70A;功率(Pd):93W;导通电阻(RDS(on)@Vgs,Id):6.8mΩ@10V,30A;阈值电压(Vgs(th)@Id):3.2V@250uA;栅极电荷(Qg@Vgs):110nC@10V;输入电容(Ciss@Vds):7.089nF@25V;反向传输电容(Crss@Vds):139pF@25V;工作温度:-55℃~+175℃@(Tj); | 获取价格 | ||
| MP13N50 | MINOS | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):13A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):340mΩ@10V,6.5A;阈值电压(Vgs(th)@Id):3.1V@250uA;栅极电荷(Qg@Vgs):40nC@10V;输入电容(Ciss@Vds):2.315nF@25V;反向传输电容(Crss@Vds):11pF@25V;工作温度:+175℃@(Tj); | 获取价格 |
