找到mv8733相关的规格书共6,076
型号厂商描述数据手册替代料参考价格
BD49E37G-MTRRohm SemiconductorROHM - BD49E37G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.7V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.7V Threshold, 1 Monitor, SSOP-5获取价格
BD49E34G-MTRRohm SemiconductorROHM - BD49E34G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.4V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.4V Threshold, 1 Monitor, SSOP-5获取价格
BD49E32G-MTRRohm SemiconductorROHM - BD49E32G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.2V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.2V Threshold, 1 Monitor, SSOP-5获取价格
BD49E33G-MTRRohm SemiconductorROHM - BD49E33G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.3V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 3.3V Threshold, 1 Monitor, SSOP-5获取价格
BD53E44G-MTRRohm SemiconductorROHM - BD53E44G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 4.4V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 4.4V Threshold, 1 Monitor, SSOP-5获取价格
DTA114YE-MSMason semiconductor晶体管类型:1个PNP-预偏置 功率(Pd):150mW 集电极电流(Ic):100mA 最小输入电压(VI(on)@Ic/Io,Vce/Vo):1.4V@1mA,0.3V 最大输入电压(VI(off)@Ic/Io,Vce/Vcc):300mV@100uA,5V 输出电压(VO(on)@Io/Ii):300mV@5mA,0.25mA获取价格
BDJ5FC0WFP-E2Rohm SemiconductorROHM - BDJ5FC0WFP-E2 - Fixed LDO Voltage Regulator, 16V to 26.5V, 300mV drop, 15V/1A out, TO-252-5 - Fixed LDO Voltage Regulator, 16V to 26.5V, 300mV drop, 15V/1A out, TO-252-5获取价格
BD48E56G-TRRohm SemiconductorROHM - BD48E56G-TR - Supervisory/Voltage Detector, Active-Low Open-Drain, 950mV to 10V, 5.6V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, Active-Low Open-Drain, 950mV to 10V, 5.6V Threshold, 1 Monitor, SSOP-5获取价格
BD53E43G-MTRRohm SemiconductorROHM - BD53E43G-MTR - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 4.3V Threshold, 1 Monitor, SSOP-5 - Supervisory/Voltage Detector, AEC-Q100, 950mV to 10V Supply, 4.3V Threshold, 1 Monitor, SSOP-5获取价格
DTA144EKAFoshan Blue Rocket Electronics Co., Ltd.晶体管类型:1个PNP-预偏置;功率(Pd):200mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@2mA,300mV;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):100mV@10mA,500uA;直流电流增益(hFE@Ic,Vce):-;输入电阻:47获取价格
DTA114EL-T92-KUnisonic Technology Co., Ltd.晶体管类型:1个PNP-预偏置;功率(Pd):625mW;集电极电流(Ic):100mA;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):-;集射极饱和电压(VCE(sat)@Ic,Ib):-;最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@10mA,300mV;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):500mV@100uA,5V;输出电压(VO(on)@Io/Ii):300mV@10mA,500uA;直流电流增益(hFE@Ic,Vce):30@5mA,5获取价格
PDTD113ZUXRubycon Corporation晶体管类型:1个NPN-预偏置;功率(Pd):425mW;集电极电流(Ic):-;集射极击穿电压(Vceo):50V;集电极截止电流(Icbo):100nA;集射极饱和电压(VCE(sat)@Ic,Ib):100mV@50mA,2.5mA;最小输入电压(VI(on)@Ic/Io,Vce/Vo):800mV@20mA,0.3V;最大输入电压(VI(off)@Ic/Io,Vce/Vcc):600mV@100uA,5V;输出电压(VO(on)@Io/Ii):-;直流电流增益(hFE@Ic,Vce):70@50m获取价格
DTC124EE-MSMason semiconductor晶体管类型:1个NPN-预偏置 功率(Pd):200mW 最小输入电压(VI(on)@Ic/Io,Vce/Vo):3V@20mA,0.3V 最大输入电压(VI(off)@Ic/Io,Vce/Vcc):300mV@100uA,5V 输出电压(VO(on)@Io/Ii):300mV@50mA,2.5mA 直流电流增益(hFE@Ic,Vce):100@5mA,10V获取价格
ECH8501-TL-HMurata Manufacturing Co., Ltd.晶体管类型:1个NPN,1个PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):5A;功率(Pd):1.6W;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):100mV@2.5A,125mA;75mV@2.5A,125mA;直流电流增益(hFE@Ic,Vce):200@500mA,2V;特征频率(fT):260MHz;280MHz;工作温度:+150℃@(Tj);获取价格
BC847PNRubycon Corporation晶体管类型:1个NPN,1个PNP 集射极击穿电压(Vceo):45V 集电极电流(Ic):100mA 功率(Pd):200mW 集电极截止电流(Icbo):15nA 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):600mV@100mA,5mA;650mV@100mA,5mA 直流电流增益(hFE@Ic,Vce):200@2mA,5V;特征频率(fT) 100MHz工作温度 +150℃@(Tj)获取价格
ORPC-817MC-FShenZhen Orient Technology Co.,Ltd.输入电压类型:DC;输出通道数:1;正向电压:1.2V;反向电压:6V;输出电流:50mA;接收端电压:35V;集射极饱和电压(Vce(sat)@Ic,IF):100mV@1mA,20mA;隔离电压(rms):5kV;获取价格
DSS34Rubycon Corporation二极管配置:独立式;直流反向耐压(Vr):40V;平均整流电流(Io):3A;正向压降(Vf):550mV@3A;反向电流(Ir):500uA@40V;获取价格
UT2302G-AE2-RUnisonic Technology Co., Ltd.类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.4A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):95mΩ@2.5V,3.1A;阈值电压(Vgs(th)@Id):450mV@250uA;获取价格
K20102B TLDCosmo Electronics Corporation输入电压类型:DC;输出通道数:1;正向电压:1.2V;反向电压:6V;输出电流:50mA;接收端电压:80V;集射极饱和电压(Vce(sat)@Ic,IF):100mV@1mA,20mA;隔离电压(rms):5kV;获取价格
KP10200ECosmo Electronics Corporation输入电压类型:DC;输出通道数:2;正向电压:1.2V;反向电压:6V;输出电流:50mA;接收端电压:80V;集射极饱和电压(Vce(sat)@Ic,IF):100mV@1mA,20mA;隔离电压(rms):5kV;获取价格