| HYG020N04NA1P | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):220A;功率(Pd):200W;导通电阻(RDS(on)@Vgs,Id):1.8mΩ@10V,60A;阈值电压(Vgs(th)@Id):2.7V@250uA;栅极电荷(Qg@Vgs):134.2nC@10V;输入电容(Ciss@Vds):5.755nF@25V;反向传输电容(Crss@Vds):650pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| HY3606B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HY1603D | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):62A;功率(Pd):36W;导通电阻(RDS(on)@Vgs,Id):5.5mΩ@10V,31A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| HY3606P | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):162A;功率(Pd):214W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,81A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| HYG032N03LR1C1 | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):55A;功率(Pd):23W;导通电阻(RDS(on)@Vgs,Id):3.3mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.8V@250uA;栅极电荷(Qg@Vgs):32nC@10V;输入电容(Ciss@Vds):2.872nF@25V;反向传输电容(Crss@Vds):277pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| HYG045P03LQ1C2 | HUAYI MICROELECTRONICS CO.,LTD. | HYG045P03LQ1C2 | | | 获取价格 |
| HYG016N04LS1P | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):240A;功率(Pd):200mW;导通电阻(RDS(on)@Vgs,Id):1.4mΩ@10V,40A;阈值电压(Vgs(th)@Id):1.9V@250uA;栅极电荷(Qg@Vgs):43.6nC@10V;输入电容(Ciss@Vds):5.894nF@25V;反向传输电容(Crss@Vds):53pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| HYG024N03LR1C2 | HUAYI MICROELECTRONICS CO.,LTD. | | | | 获取价格 |
| HY3906W | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | | | 获取价格 |
| HY1001P | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HYG082N03LR1C1 | HUAYI MICROELECTRONICS CO.,LTD. | HYG082N03LR1C1 | | | 获取价格 |
| HY3210B | HUAYI MICROELECTRONICS CO.,LTD. | HY3210B | | | 获取价格 |
| HY3704B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HY12P03S | HUAYI MICROELECTRONICS CO.,LTD. | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):12A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):15mΩ@10V,12A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| HY4008B6 | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| HY3203C2 | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):120A;功率(Pd):52W;导通电阻(RDS(on)@Vgs,Id):2.4mΩ@10V,20A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| HYG060P04LQ1D | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):70A;功率(Pd):65W;导通电阻(RDS(on)@Vgs,Id):2.8mΩ@10V,20A;阈值电压(Vgs(th)@Id):1.6V@250uA;栅极电荷(Qg@Vgs):63nC@4.5V;输入电容(Ciss@Vds):6.774nF@25V;反向传输电容(Crss@Vds):403pF@25V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| HYG350P13NA1B | HUAYI MICROELECTRONICS CO.,LTD. | | | | 获取价格 |
| HY4903B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):290A;功率(Pd):214W;导通电阻(RDS(on)@Vgs,Id):2mΩ@10V,145A; | | | 获取价格 |
| HY3906B | HUAYI MICROELECTRONICS CO.,LTD. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):190A;功率(Pd):220W;导通电阻(RDS(on)@Vgs,Id):4mΩ@10V,95A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
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