找到“ID8155”相关的规格书共8,200个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| PMN52XPX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| PMN50EPEX | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| ME3587 | MATSUKI | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| TDM3420TR | TECHCODE | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.3A;功率(Pd):1.6W;导通电阻(RDS(on)@Vgs,Id):23mΩ@10V,8A;阈值电压(Vgs(th)@Id):3V@250μA; | 获取价格 | ||
| SE8831A | SINO-IC | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.1A;功率(Pd):700mW;导通电阻(RDS(on)@Vgs,Id):19.5mΩ@4.5V,6.3A;阈值电压(Vgs(th)@Id):1V@250uA; | 获取价格 | ||
| KO6604 | GUANGDONG KEXIN INDUSTRIAL CO.,LTD | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HSW8810 | HUASHUO SEMICONDUCTOR | 类型:2个N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):20mΩ@4.5V,4A;阈值电压(Vgs(th)@Id):1.2V@250μA; | 获取价格 | ||
| NTGS3446T1G | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| KND3403B | KIA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HD60P03(AFE) | HL | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPN70R1K2P7S | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| LSH70R450GT | Lonten Semiconductor Co.,Ltd | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):11A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):450mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| NCE70T540I | WUXI NCE POWER CO., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| NCE0125AI | WUXI NCE POWER CO., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| VBFB1208N | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):25A;功率(Pd):145W;导通电阻(RDS(on)@Vgs,Id):56mΩ@10V,25A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBFB1104N | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):35A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@10V,35A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBFB16R04 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):125W;导通电阻(RDS(on)@Vgs,Id):2.2Ω@10V,3.7A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBFB2317 | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):40A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):18mΩ@10V,40A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| HYG053N10NS1P | HUAYI MICROELECTRONICS CO.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| GT68N12T | Goford Semiconductor Co.,Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 |
