找到“ID8155”相关的规格书共8,200个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| SE80160GA | SINO-IC | 类型:N沟道;漏源电压(Vdss):80V;连续漏极电流(Id):160A;功率(Pd):285W;导通电阻(RDS(on)@Vgs,Id):2.8mΩ@10V,20A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| GC11N70T | Goford Semiconductor Co.,Ltd. | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):11A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):395mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| FDP52N20 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):52A;功率(Pd):357W;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,26A;阈值电压(Vgs(th)@Id):5V@250uA; | 获取价格 | ||
| NCEP01T11 | WUXI NCE POWER CO., Ltd. | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):108A;功率(Pd):160W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| LNC04R035B | Lonten Semiconductor Co.,Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):120A;功率(Pd):150W;导通电阻(RDS(on)@Vgs,Id):6mΩ@4.5V,10A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| SMIRF12N65T1TL | Sourcechips | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| TPA80R300C | Wuxi Unigroup Microelectronics Co. Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| FCP190N65F | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):20.6A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):190mΩ@10V,10A;阈值电压(Vgs(th)@Id):5V@2mA; | 获取价格 | ||
| HSSN3139 | HUASHUO SEMICONDUCTOR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):500mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):630mΩ@4.5V,500mA;阈值电压(Vgs(th)@Id):1.1V@250uA; | 获取价格 | ||
| NX7002AKW,115 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| NTS4001NT1G | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):270mA;功率(Pd):330mW;导通电阻(RDS(on)@Vgs,Id):1.5Ω@4V,10mA;阈值电压(Vgs(th)@Id):1.5V@100uA; | 获取价格 | ||
| 2N7002W | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):200mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,500mA;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| 2N7002WT1G | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):310mA;功率(Pd):280mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,500mA;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| NCEP1545K | WUXI NCE POWER CO., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HSU4016 | HUASHUO SEMICONDUCTOR | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):75A;功率(Pd):52.1W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V,15A;阈值电压(Vgs(th)@Id):2.5V@250uA; | 获取价格 | ||
| TPD65R600M | Wuxi Unigroup Microelectronics Co. Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BUK9212-55B,118 | Rubycon Corporation | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPD50R1K4CE | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPD65R400CE | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):15.1A;功率(Pd):118W;导通电阻(RDS(on)@Vgs,Id):400mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):3.5V@320uA; | 获取价格 | ||
| TPD65R940C | Wuxi Unigroup Microelectronics Co. Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):28W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 |
