| 1 | BL8563-12PRA | 输出类型:-; | 下载 | SHANGHAI BELLING |
| 2 | BZX55C5V6_AY_10001 | 二极管配置:独立式;稳压值(标称值):5.6V;稳压值(范围):5.2V~6V;精度:±5%;功率:500mW;反向电流(Ir):100nA@1V;阻抗(Zzt):... | 下载 | PANJIT SEMI CONDUCTOR |
| 3 | BZQ55-C8V2 | BZQ55-C8V2 - SURFACE MOUNT ZENER DIODES - Pan Jit International Inc. | 下载 | PANJIT[PanJitInternationalInc.] |
| 4 | BTA04-600CW | | 下载 | JIANGSU WEIDA SEMICONDUCTOR CO.,LTD |
| 5 | BTA10-800BW | | 下载 | JIANGSU WEIDA SEMICONDUCTOR CO.,LTD |
| 6 | BTA08F | 可控硅类型:三端双向可控硅;通态RMS电流(It(rms)):8A;浪涌电流(Itsm@f):80A@20ms;门极平均耗散功率(PG(AV)):1W;门极触发电流... | 下载 | YFW |
| 7 | BZQ55-C75 | BZQ55-C75 - SURFACE MOUNT ZENER DIODES - Pan Jit International Inc. | 下载 | PANJIT[PanJitInternationalInc.] |
| 8 | BU406-220C | 晶体管类型:NPN;集射极击穿电压(Vceo):200V;集电极电流(Ic):7A;功率(Pd):60W;集电极截止电流(Icbo):10uA;集电极-发射极饱和电... | 下载 | Jilin Sino-Microelectronics Co., Ltd. |
| 9 | BZQ55-C6V2 | BZQ55-C6V2 - SURFACE MOUNT ZENER DIODES - Pan Jit International Inc. | 下载 | PANJIT[PanJitInternationalInc.] |
| 10 | BR13N50 | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):13A;功率(Pd):195W;导通电阻(RDS(on)@Vgs,Id):480mΩ@10V,6... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
| 11 | BZQ55-C62 | BZQ55-C62 - SURFACE MOUNT ZENER DIODES - Pan Jit International Inc. | 下载 | PANJIT[PanJitInternationalInc.] |
| 12 | BR40P03 | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):40A;功率(Pd):80W;导通电阻(RDS(on)@Vgs,Id):14mΩ@10V,24A;... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
| 13 | BRCS3205RA | 漏源电压(Vdss):55V;连续漏极电流(Id):110A;导通电阻(RDS(on)@Vgs,Id):8mΩ 10V,90A;功率(Pd):200W;阈值电压(V... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
| 14 | BZQ55-C5V1 | BZQ55-C5V1 - SURFACE MOUNT ZENER DIODES - Pan Jit International Inc. | 下载 | PANJIT[PanJitInternationalInc.] |
| 15 | BU406T1TL | 晶体管类型:NPN;集射极击穿电压(Vceo):200V;集电极电流(Ic):7A;功率(Pd):60W;集电极截止电流(Icbo):-;集电极-发射极饱和电压(V... | 下载 | Sourcechips |
| 16 | BSS138BKW,115 | SOT-323 MOSFETs ROHS | 下载 | Rubycon Corporation |
| 17 | BSS816NWH6327 | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):1.4A;功率(Pd):500mW;导通电阻(RDS(on)@Vgs,Id):160mΩ@2.5V... | 下载 | Infineon Technologies |
| 18 | BC859CW,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):420@2m... | 下载 | Rubycon Corporation |
| 19 | BC848BWT1G | 晶体管类型:NPN;集射极击穿电压(Vceo):30V;集电极电流(Ic):100mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):200@2m... | 下载 | Murata Manufacturing Co., Ltd. |
| 20 | BC857W,115 | 晶体管类型:PNP;集射极击穿电压(Vceo):45V;集电极电流(Ic):100mA;功率(Pd):200mW;集电极截止电流(Icbo):15nA;集电极-发射... | 下载 | Rubycon Corporation |
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