找到“bts650p”相关的规格书共6,180个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| LM3202TL | NSC[NationalSemiconductor] | LM3202TL - 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers - National Semiconductor | 获取价格 | ||
| 103-271K | API Delevan Inc. | 固定电感器 Nonstandard, 2 Lead 270nH ±10% 650mA 230mΩ 375MHz 25@25MHz | 获取价格 | ||
| FCC17-C37SA-650G | AMPHENOL[AmphenolCorporation] | FCC17-C37SA-650G - FCC 17 FILTERED D-SUB, RIGHT ANGLE .318[8.08] F/P, PIN & SOCKET - PLASTIC MTG BRACKET & BOARDLOCK - Amphenol Corporation | 获取价格 | ||
| 09P/F-151K-50 | Fastron technologies PTY LTD | Inductor Pluggable Shielded Wirewound 150uH 10% 20KHz 40Q-Factor Ferrite 650mA 400mOhm DCR RDL Loose | 获取价格 | ||
| CQ7584-ALB | Coilcraft Inc. | COILCRAFT - CQ7584-ALB - Filter, EMI, Data Line, Surface Mount, 2.2 mH, 6.81 kohm, 650 mA, 9.4mm x 5.6mm x 4.8mm | 获取价格 | ||
| FCD600N65S3R0 | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):6A;功率(Pd):54W;导通电阻(RDS(on)@Vgs,Id):600mΩ@3A,10V; | 获取价格 | ||
| IDP20E65D2 | Infineon Technologies | 二极管配置:独立式;功率:120W;直流反向耐压(Vr):650V;平均整流电流(Io):40A;正向压降(Vf):2.2V@20A;反向电流(Ir):40uA@650V;反向恢复时间(trr):43ns;工作温度:-40℃~+175℃@(Tvj); | 获取价格 | ||
| 8230-96-RC | Bourns Inc. | Rf Choke, 120Nh, 1.1A, 10%, 650Mhz; Product Range:8230 Series; Inductance:120Nh; Dc Current Rating:1.1A; Dc Resistance Max:0.08Ohm; Inductance Tolerance:± 10%; Self Resonant Frequency:650Mhz; Case Dimensions:3.05Mm X 7.62Mm Rohs Compliant: Yes | 获取价格 | ||
| IDP30E65D1 | Infineon Technologies | 二极管配置:独立式;功率:143W;直流反向耐压(Vr):650V;平均整流电流(Io):60A;正向压降(Vf):1.7V@30A;反向电流(Ir):40uA@650V;反向恢复时间(trr):95ns;工作温度:-40℃~+175℃@(Tvj); | 获取价格 | ||
| NCE65T360 | WUXI NCE POWER CO., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):11.5A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):360mΩ@10V,7A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| FCP190N65F | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):20.6A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):190mΩ@10V,10A;阈值电压(Vgs(th)@Id):5V@2mA; | 获取价格 | ||
| IPD65R400CE | Infineon Technologies | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):15.1A;功率(Pd):118W;导通电阻(RDS(on)@Vgs,Id):400mΩ@10V,3.2A;阈值电压(Vgs(th)@Id):3.5V@320uA; | 获取价格 | ||
| TPD65R940C | Wuxi Unigroup Microelectronics Co. Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):28W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| 0805L020YR | Littelfuse Inc. | 最大电压：9V 最大电流：100A 保持电流：200mA 跳闸电流：500mA 初始态阻值(最小值)：650mΩ 跳断后阻值(最大值)：3.5Ω 最大动作时间：0.02s | 获取价格 | ||
| 50557-7112 | MOLEX7[MolexElectronicsLtd.] | 50557-7112 - Ring Tongue Terminal for 4 AWG, Closed Uninsulated Brazed Barrel, Stud Size5/16" (M8), Oxygen-Free Copper, Length 33.40mm (1.315"), Clearance 13.70mm539"), Width 16.50mm (.650") - Molex Electronics Ltd. | 获取价格 | ||
| FHA20N65A | Guangzhou Feihong Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):20A;功率(Pd):250W;导通电阻(RDS(on)@Vgs,Id):400mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS4N65A8HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| CS5N20A3 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):4.8A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,2.9A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| IDDD16G65C6 | Infineon Technologies | 二极管配置:独立式;直流反向耐压(Vr):650V;平均整流电流(Io):43A;正向压降(Vf):1.25V@16A;反向电流(Ir):1.6uA@420V; | 获取价格 | ||
| BCP53-10,135 | Rubycon Corporation | 晶体管类型:PNP;集射极击穿电压(Vceo):80V;集电极电流(Ic):1A;功率(Pd):650mW;直流电流增益(hFE@Ic,Vce):63@150mA,2V; | 获取价格 |
