| MMDT5551DW | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 塑料封装晶体管,双NPN | | | 获取价格 |
| MMBT5401T | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | - | | | 获取价格 |
| BZT52C2V4S | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOD-323塑料封装二极管 | | | 获取价格 |
| BZT52C11S | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOD-323塑料封装二极管 | | | 获取价格 |
| BZT52C8V2S | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOD-323塑料封装二极管 | | | 获取价格 |
| BAT54SDW | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOT363 SMT | | | 获取价格 |
| BAT54CDW | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 塑料封装二极管、肖特基势垒二极管阵列 | | | 获取价格 |
| BAT43WS | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOD323 SMT | | | 获取价格 |
| 2N5551U 5551 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | NPN 160V 600mA 5551(5551表示丝印) | | | 获取价格 |
| BAT54C | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOT23 | | | 获取价格 |
| BAS70-04 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOT23 | | | 获取价格 |
| DTC144EE | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | SOT523 30mA 150mW | | | 获取价格 |
| MMBT3906T | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 三极管 | | | 获取价格 |
| SD103AWT | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 肖特基二极管SOD523 VR=40V Io=350mA IR=50μA | | | 获取价格 |
| MMTL431 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 电压基准芯片 SOT23-3 | | | 获取价格 |
| S9012 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 晶体管类型:PNP 集电极电流(Ic):500mA 集射极击穿电压(Vceo):25V 功率(Pd):300mW 集电极-发射极饱和电压(VCE(sat)@Ic,Ib):600mV@500mA,50mA 直流电流增益(hFE@Ic,Vce):120@50mA,1V 特征频率(fT):150MHz 工作温度(最小值):- 工作温度(最大值):+150℃@(Tj) | | | 获取价格 |
| RB551V-30 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 硅外延平面肖特基势垒二极管 SOD323 VRM=30V Io=500mA IR=100μA | | | 获取价格 |
| 2SC1623 | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 集射极击穿电压(Vceo):50V 集电极电流(Ic):100mA 功率(Pd):200mW 集电极截止电流(Icbo):100nA | | | 获取价格 |
| 1N5819WS | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 肖特基二极管 Single VR=40V IF=1A IR=1mA CT=120pF SOD323 | | | 获取价格 |
| 1N5817W | CHINA BASE ELECTRONIC TECHNOLOGY LIMITED | 二极管配置:独立式 正向压降(Vf):450mV 3A 直流反向耐压(Vr):20V 平均整流电流(Io):1A 反向电流(Ir):1mA 20V | | | 获取价格 |