| FS3400 | Shenzhen FuxinSemi Technology Co., Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.8A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):28mΩ@10V,2.9A; | | | 获取价格 |
| DFR1M | Shenzhen FuxinSemi Technology Co., Ltd | 二极管配置:独立式;直流反向耐压(Vr):1kV;平均整流电流(Io):1A;正向压降(Vf):1.3V@1A;反向恢复时间(trr):500ns; | | | 获取价格 |
| RS1MA | Shenzhen FuxinSemi Technology Co., Ltd | 快恢复二极管 VRRM=1KV Io=1A VF=1.3V CJ=15pF trr=500ns SMA | | | 获取价格 |
| SS34F | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| DSF1D | Shenzhen FuxinSemi Technology Co., Ltd | DSF1D | | | 获取价格 |
| FESD05BD3 | Shenzhen FuxinSemi Technology Co., Ltd | TVS二极管 VR=5V VBR(Min)=6.2V VC=21V IPP=17A Ppp=350W SOD323 | | | 获取价格 |
| M7A | Shenzhen FuxinSemi Technology Co., Ltd | M7A | | | 获取价格 |
| BT134W-600E | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| FDN337N | Shenzhen FuxinSemi Technology Co., Ltd | N Channel Mosfet, 30V, 2.2A, Super Sot-3; Channel Type:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.2A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700Mv Rohs Compliant: Yes | | | 获取价格 |
| DB107S | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| SF56G | Shenzhen FuxinSemi Technology Co., Ltd | 二极管配置:-;直流反向耐压(Vr):400V;平均整流电流(Io):5A;正向压降(Vf):1.25V@5A;反向电流(Ir):10uA@400V;反向恢复时间(trr):35ns;工作温度:-65℃~+150℃@(Tj); | | | 获取价格 |
| MCR100-8-23L | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| MMBTA42 | Shenzhen FuxinSemi Technology Co., Ltd | 晶体管类型:PNP;集射极击穿电压(Vceo):300V;集电极电流(Ic):300mA;功率(Pd):350mW;集电极截止电流(Icbo):250nA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):200mV@20mA,2mA;直流电流增益(hFE@Ic,Vce):100@10mA,10V;特征频率(fT):50MHz;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| MCR100-8W | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BT131G | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BT169D | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| BTA16-800BW | Shenzhen FuxinSemi Technology Co., Ltd | 双向可控硅 | | | 获取价格 |
| MMBT3906 | Shenzhen FuxinSemi Technology Co., Ltd | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):200mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):100@10mA,1V; | | | 获取价格 |
| ESD5311N | Shenzhen FuxinSemi Technology Co., Ltd | | | | 获取价格 |
| B560C | Shenzhen FuxinSemi Technology Co., Ltd | 肖特基二极管 电压:60V 电流:5A SMC(DO-214AB) | | | 获取价格 |
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