找到“VGS-25-XX”相关的规格书共376,084个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| FDD5670 | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | 获取价格 | ||
| CPH3456-TL-W | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-; | 获取价格 | ||
| PSMN7R6-100BSEJ | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):75A;功率(Pd):296W;导通电阻(RDS(on)@Vgs,Id):7.6mΩ@25A,10V; | 获取价格 | ||
| HSS2307 | HUASHUO SEMICONDUCTOR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6A;功率(Pd):1.4W;导通电阻(RDS(on)@Vgs,Id):25mΩ@4.5V,6A; | 获取价格 | ||
| AP9565K | Shenzhen.Quan Li Semiconductor Co., Ltd. | 类型:P沟道;漏源电压(Vdss):40V;连续漏极电流(Id):24.5A;功率(Pd):25W;导通电阻(RDS(on)@Vgs,Id):42mΩ@10V,12A; | 获取价格 | ||
| 20N06 | Goford Semiconductor Co.,Ltd. | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):41W;导通电阻(RDS(on)@Vgs,Id):20mΩ; | 获取价格 | ||
| RU3030M2 | Shenzhen City Ruichips Semiconductor Co., Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=30A RDS(ON)=25mΩ@16A,4.5V PDFN3333 | 获取价格 | ||
| DMP4015SSSQ-13 | Diodes Incorporated | MOS管 P-Channel VDS=40V VGS=±25V ID=10.1A RDS(ON)=11mΩ@10V SO8_150MIL | 获取价格 | ||
| AGM420MA | AGM-SEMI Semiconductor Technology Co., Ltd | MOS管 N-Channel, P-Channel VDS=40V VGS=±20V ID=18A,-20A RDS(ON)=25mΩ，34mΩ@4.5V DFN5X6-8 | 获取价格 | ||
| DMP3020LSS-13 | Diodes Incorporated | MOS管 P-Channel VDS=30V VGS=±25V ID=12A RDS(ON)=14mΩ@10V SOIC8_150MIL | 获取价格 | ||
| WSP4445 | Winsok power Semiconductor CO., LTD | MOS管 P-Channel VDS=40V VGS=±25V ID=16.7A RDS(ON)=10mΩ@10V SOP8_150MIL | 获取价格 | ||
| WSP4807 | Winsok power Semiconductor CO., LTD | MOS管 Dual P-Channel VDS=30V VGS=±25V ID=8.9A RDS(ON)=21mΩ@10V SOP8_150MIL | 获取价格 | ||
| BUK962R8-60E,118 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120A;功率(Pd):324W;导通电阻(RDS(on)@Vgs,Id):2.29mΩ@5V,25A; | 获取价格 | ||
| BUK766R0-60E,118 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):75A;功率(Pd):182W;导通电阻(RDS(on)@Vgs,Id):4.58mΩ@10V,25A; | 获取价格 | ||
| HUF75639S3ST | Murata Manufacturing Co., Ltd. | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):56A;功率(Pd):200W;导通电阻(RDS(on)@Vgs,Id):25mΩ@10V,56A; | 获取价格 | ||
| SWD9N25D | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):250V;连续漏极电流(Id):9A;导通电阻(RDS(on)@Vgs,Id):370mΩ; | 获取价格 | ||
| SWD9N50D | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):500V;连续漏极电流(Id):9A;导通电阻(RDS(on)@Vgs,Id):680mΩ; | 获取价格 | ||
| SWD6N80D | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):800V;连续漏极电流(Id):6A;导通电阻(RDS(on)@Vgs,Id):2Ω; | 获取价格 | ||
| SWD7N60D | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):600V;连续漏极电流(Id):7A;导通电阻(RDS(on)@Vgs,Id):1.05Ω; | 获取价格 | ||
| SWD630D | SEMIPOWER TECHNOLOGY CO.,LTD. | 漏源电压(Vdss):200V;连续漏极电流(Id):9A;导通电阻(RDS(on)@Vgs,Id):270mΩ; | 获取价格 |
