| CS7N80FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):7A;功率(Pd):48W;导通电阻(RDS(on)@Vgs,Id):1.8Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS8N60A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):110W;导通电阻(RDS(on)@Vgs,Id):800mΩ@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):29nC@10V;输入电容(Ciss@Vds):1.253nF@25V;反向传输电容(Crss@Vds):15pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS10N65FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):10A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):1Ω@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS100N08A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):100A;功率(Pd):198W;导通电阻(RDS(on)@Vgs,Id):8.5mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS2N65FA9 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):27W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS12N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):12A;功率(Pd):55W;导通电阻(RDS(on)@Vgs,Id):650mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS25N06C4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):25A;功率(Pd):36.2W;导通电阻(RDS(on)@Vgs,Id):29mΩ@10V,19A;阈值电压(Vgs(th)@Id):2V@250uA; | | | 获取价格 |
| CD7379CZ | Wuxi China Resources Microelectronics Limited | 功放类型:-;输出功率:-; | | | 获取价格 |
| CRSQ113N20NZ | Wuxi China Resources Microelectronics Limited | MOSFETs N-沟道 200V 110A TO-247 | | | 获取价格 |
| CS2N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CR7N65A4K | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):7A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):24nC@10V;输入电容(Ciss@Vds):1.08nF@25V;反向传输电容(Crss@Vds):3.2pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CR4N60A4K | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST085N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):120A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):4.217nF@75V;反向传输电容(Crss@Vds):38pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CRSD082N10L2 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA; | | | 获取价格 |
| CRJQ80N65F | Wuxi China Resources Microelectronics Limited | MOSFETs N-CH 650V 43A 77mΩ TO247-3L | | | 获取价格 |
| CRXU10D065G2 | Wuxi China Resources Microelectronics Limited | CRXU10D065G2 | | | 获取价格 |
| CRTS045N06N | Wuxi China Resources Microelectronics Limited | MOSFETs N-沟道 VDS=60V VGS=±25V ID=120A RDS(ON)=4.5mΩ@60A,10V TO263 | | | 获取价格 |
| PC817B | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| PC817C | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST060N10N | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel 100V 120A TO220-3 3V@250µA 227W | | | 获取价格 |
