| 3DD13003F6 | Wuxi China Resources Microelectronics Limited | 晶体管类型:NPN;集射极击穿电压(Vceo):400V;集电极电流(Ic):1.5A;功率(Pd):50W;集电极截止电流(Icbo):100μA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):300mV@1A,250mA;直流电流增益(hFE@Ic,Vce):-;特征频率(fT):5MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS4N60A3R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS460FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD7266CZ | Wuxi China Resources Microelectronics Limited | 音频功率放大器的类型:-;输出类型:-;输出功率:-;工作电压:-; | | | 获取价格 |
| CS4N70FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):4A;功率(Pd):30W;导通电阻(RDS(on)@Vgs,Id):2.55Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):12.7nC@10V;输入电容(Ciss@Vds):606pF@25V;反向传输电容(Crss@Vds):2.7pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS16N06AE-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):16A;功率(Pd):3.1W;导通电阻(RDS(on)@Vgs,Id):10mΩ@10V,8A;阈值电压(Vgs(th)@Id):3V@250uA; | | | 获取价格 |
| CS1N60C1HD | Wuxi China Resources Microelectronics Limited | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| CS2N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CR7N65A4K | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):7A;功率(Pd):108W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,3.5A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):24nC@10V;输入电容(Ciss@Vds):1.08nF@25V;反向传输电容(Crss@Vds):3.2pF@25V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CR4N60A4K | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST085N15N | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):150V;连续漏极电流(Id):120A;功率(Pd):227W;导通电阻(RDS(on)@Vgs,Id):7mΩ@10V,50A;阈值电压(Vgs(th)@Id):3V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):4.217nF@75V;反向传输电容(Crss@Vds):38pF@75V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| CRSD082N10L2 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):78A;功率(Pd):101W;导通电阻(RDS(on)@Vgs,Id):8.6mΩ@10V,50A;阈值电压(Vgs(th)@Id):2.2V@250uA; | | | 获取价格 |
| CRJQ80N65F | Wuxi China Resources Microelectronics Limited | MOSFETs N-CH 650V 43A 77mΩ TO247-3L | | | 获取价格 |
| CRXU10D065G2 | Wuxi China Resources Microelectronics Limited | CRXU10D065G2 | | | 获取价格 |
| CRTS045N06N | Wuxi China Resources Microelectronics Limited | MOSFETs N-沟道 VDS=60V VGS=±25V ID=120A RDS(ON)=4.5mΩ@60A,10V TO263 | | | 获取价格 |
| PC817B | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| PC817C | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CRST060N10N | Wuxi China Resources Microelectronics Limited | MOSFETs N-Channel 100V 120A TO220-3 3V@250µA 227W | | | 获取价格 |
| CS5N60A8H | Wuxi China Resources Microelectronics Limited | CS5N60A8H | | | 获取价格 |
| CRTM024N03L2-G | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=30V VGS=±20V ID=60A RDS(ON)=2.2mΩ@10V DFN_5X6MM | | | 获取价格 |
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