| SKD502T | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 4.6mΩ, 120A TO220 | | | 获取价格 |
| CRSS042N10N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CRTD055N03L | Wuxi China Resources Microelectronics Limited | 沟槽N-MOSFET 30V，4.3米Ω, 58A至252 | | | 获取价格 |
| CS9N20A4R | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=240mΩ TO252 | | | 获取价格 |
| PC817SC | Wuxi China Resources Microelectronics Limited | 6V 50mA | | | 获取价格 |
| IPT40Q06-TEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-TEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT4006-XXH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT4006-XXH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT4006-50H | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT4006-50H - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-CEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEH - High current density due to double mesa technology; - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-CEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-CEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-DEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-DEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q08-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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