| 1 | 2SC2884Y | 晶体管类型:NPN;集射极击穿电压(Vceo):25V;集电极电流(Ic):1.5A;功率(Pd):1W;集电极截止电流(Icbo):100nA;集电极-发射极饱和... | 下载 | Taiwan shike Electronics co.,ltd |
| 2 | 2SA1416S-TD-E | 晶体管类型:PNP;集射极击穿电压(Vceo):100V;集电极电流(Ic):1A;功率(Pd):500mW; | 下载 | Murata Manufacturing Co., Ltd. |
| 3 | 2SD1624S-TD-E | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):3A;功率(Pd):500mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和电... | 下载 | Murata Manufacturing Co., Ltd. |
| 4 | 2N7002KT1G-MS | | 下载 | Mason semiconductor |
| 5 | 2SA1514KFRAT146 | Transistor, Aec-Q101, Pnp, -120V, Sot346; Transistor Polarity:pnp; Collector Emitt... | 下载 | Rohm Semiconductor |
| 6 | 2N7002,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):300mA;功率(Pd):830mW;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,50... | 下载 | Rubycon Corporation |
| 7 | 2N7002LT1G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):115mA;功率(Pd):225mW;导通电阻(RDS(on)@Vgs,Id):7.5Ω@10V,... | 下载 | Murata Manufacturing Co., Ltd. |
| 8 | 2N7002P,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):360mA;功率(Pd):350mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Rubycon Corporation |
| 9 | 2N7002BK,215 | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):350mA;功率(Pd):370mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@10V,... | 下载 | Rubycon Corporation |
| 10 | 2SC3356-R25 | 晶体管类型:-;集射极击穿电压(Vceo):12V;集电极电流(Ic):100mA;功率(Pd):200mW;集电极截止电流(Icbo):1uA;集电极-发射极饱和... | 下载 | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 11 | 2SK932-24-TB-E | 2SK932 是一款 N 沟道 JFET，15V，5 至 24mA，50mS，CP，适用于高频低噪音放大器应用。 | 下载 | Murata Manufacturing Co., Ltd. |
| 12 | 2PD602ASL,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):170@15... | 下载 | Rubycon Corporation |
| 13 | 2SC3356-R25 | 晶体管类型:-;集射极击穿电压(Vceo):12V;集电极电流(Ic):100mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):120@20mA... | 下载 | JSMICRO SEMICONDUCTOR |
| 14 | 2SD1048-6-TB-E | 晶体管类型:NPN;集射极击穿电压(Vceo):15V;集电极电流(Ic):700mA;功率(Pd):200mW;直流电流增益(hFE@Ic,Vce):200@50... | 下载 | Murata Manufacturing Co., Ltd. |
| 15 | 2N7002KT7G | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):320mA;功率(Pd):300mW;导通电阻(RDS(on)@Vgs,Id):1.6Ω@500m... | 下载 | Murata Manufacturing Co., Ltd. |
| 16 | 2SD596 | | 下载 | YONGYUTAI |
| 17 | 2SC945-P | 晶体管类型:NPN;集射极击穿电压(Vceo):50V;集电极电流(Ic):150mA;功率(Pd):250mW;集电极截止电流(Icbo):100nA;集电极-发... | 下载 | Foshan Blue Rocket Electronics Co., Ltd. |
| 18 | 250-222 | Pcb Terminal Block; Push-Button; 1.5 Mm ; Pin Spacing 3.5 Mm; 22-Pole; Push-In Cag... | 下载 | WAGO |
| 19 | 250-213 | Pcb Terminal Block; Push-Button; 1.5 Mm ; Pin Spacing 3.5 Mm; 13-Pole; Push-In Cag... | 下载 | WAGO |
| 20 | 2N6517BU | 晶体管类型:NPN;集射极击穿电压(Vceo):350V;集电极电流(Ic):500mA;功率(Pd):625mW;直流电流增益(hFE@Ic,Vce):20@50... | 下载 | Murata Manufacturing Co., Ltd. |
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