找到“TH1386”相关的规格书共6,488个
| 型号 | 厂商 | 描述 | 数据手册 | 替代料 | 参考价格 |
|---|---|---|---|---|---|
| AP18N20GH | APEC | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| WSF30150A | Winsok power Semiconductor CO., LTD | Configuration Single Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 145 VGS(th)(v) 1.6 RDS(ON)(m?)@4.366V 3.1 Qg(nC)@4.5V 22 QgS(nC) 4.3 Qgd(nC) 8.3 Ciss(pF) 2450 Coss(pF) 590 Crss(pF) 245 | 获取价格 | ||
| IPB120N06S4-H1 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| HB3510P | HL | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):50A;功率(Pd):83W;导通电阻(RDS(on)@Vgs,Id):38mΩ@10V,15A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBL1105 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):110A;功率(Pd):375W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| VBL1405 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):100A;功率(Pd):150W;导通电阻(RDS(on)@Vgs,Id):5mΩ@10V,100A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| PTY88N07 | ShenZhen Puolop Electronics co.,LTD. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| LSE70R380GT | Lonten Semiconductor Co.,Ltd | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):11A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):380mΩ@10V,5.5A;阈值电压(Vgs(th)@Id):4.5V@250uA; | 获取价格 | ||
| IPB80N06S4-05 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| IPB024N08N5 | Infineon Technologies | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| AD2N60S | Anbon Semiconductor Co., Ltd. | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):34W;导通电阻(RDS(on)@Vgs,Id):4.4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| HD60N75 | HL | 类型:N沟道;漏源电压(Vdss):75V;连续漏极电流(Id):60A;功率(Pd):3.75W;导通电阻(RDS(on)@Vgs,Id):16mΩ@10V,30A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| 18N20-252 | Goford Semiconductor Co.,Ltd. | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):18A;功率(Pd):65.8W;导通电阻(RDS(on)@Vgs,Id):160mΩ@10V,9A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| CS2N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| JCS640RH-O-R-N-A | Jilin Sino-Microelectronics Co., Ltd. | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):18A;功率(Pd):140W;导通电阻(RDS(on)@Vgs,Id):150mΩ@10V,9A;阈值电压(Vgs(th)@Id):4V@250uA; | 获取价格 | ||
| KIA5N50HD | KIA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| CJU80N03 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):80A;功率(Pd):1.25W;导通电阻(RDS(on)@Vgs,Id):6.5mΩ@10V,30A;阈值电压(Vgs(th)@Id):3V@250uA; | 获取价格 | ||
| FQU20N06LTU | Murata Manufacturing Co., Ltd. | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| KNS5610A | KIA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | 获取价格 | ||
| BSS87,115 | Rubycon Corporation | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):400mA;功率(Pd):580mW;导通电阻(RDS(on)@Vgs,Id):3Ω@10V,400mA;阈值电压(Vgs(th)@Id):2.8V@1mA; | 获取价格 |
